基于键合线等效电阻的IGBT模块老化失效研究  

Study of IGBT Module Aging Failure Base on Bond Wire Equivalent Resistance

作　　者：彭英舟 周雒维[1] 张晏铭[1] 孙鹏菊[1] 杜雄[1] Peng Yingzhou;Zhou Luowei;Zhang Yanming;Sun Pengju;Du Xiong(State Key Laboratory of Power Transmission Equipment & System Security and New Technology Chongqing University Chongqing 400044 China)

机构地区：[1]输配电装备及系统安全与新技术国家重点实验室(重庆大学),重庆400044

出　　处：《电工技术学报》2017年第20期117-123,132,共8页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金重点项目(51137006);国家自然科学基金项目(51577020)资助

摘　　要：已有研究表明,键合线老化脱落失效是影响绝缘栅双极型晶体管(IGBT)可靠性的主要因素之一。以此为研究背景,首先根据IGBT模块内部键合线的结构布局与物理特性,分析键合线等效电阻与关断暂态波形的关系,建立键合线等效电阻与关断过程中密勒平台电压以及集电极电流的数学关系式,通过实验测量获得键合线等效电阻,最后分别对键合线等效电阻与键合线断裂数的关系进行定性与定量的分析,得出键合线等效电阻会随键合线断裂数的增加同方向变化,这也证明了本文所提方法的可行性和正确性。Literature about the reliability of insulated gate bipolar transistor(IGBT)revealed that bond wire lift-off failure is one of the most dominant factors affecting the reliability of IGBT.This paper proposed a condition monitoring method of IGBT module based on bond-wire equivalent resistance RJ.The theoretical analysis about the relationship between equivalent resistance ofbond-wires and turn-off transient-waveform of IGBT was developed at first;and then the equation calculating equivalent resistance was established;finally,the relationship between bond-wire equivalent resistance and lift-off bond wires was analyzed qualitatively and quantitatively through experiments.It is concluded that bond-wire equivalent resistance RJ will increase with the increase of bond-wires lift-off,which validates the feasibility and correctness of the proposed method.

关 键 词：绝缘栅双极型晶体管 键合线 等效电阻 老化 可靠性 

分 类 号：TM464[电气工程—电器]