磁控溅射氮化钽工艺的等离子体发射光谱分析  

作　　者：刘志宇[1] 傅刚[1] 

机构地区：[1]广州大学物理与电子工程学院,广东广州510000

出　　处：《科技创新导报》2017年第25期11-18,共8页Science and Technology Innovation Herald

摘　　要：本文讨论采用等离子发射光谱(Plasma OES)作为一种独立于具体溅射装置的仪器参数的工艺参量,并在微波薄膜电阻器的氮化钽溅射制备工艺中考察了这种方法的有效性。首先分析了OES中对应于活性氮成分N2+和Ta的谱线强度与传统溅射参数的关系,结果显示单调增加溅射功率会降低等离子体成分中活性氮成分的比例,从而将成膜参数向低氮和低TCR的窗口方向移动。从OES谱线中计算的两波长玻尔兹曼图定性地显示了等离子体激发温度与溅射功率的单调关系。其次,通过将OES谱线分析结果与晶体结构(XRD)、晶粒大小(AFM)和电阻温度系数TCR等物性测量相比较,证明Plasma OES是一种可靠的溅射工艺在线监测手段。T he p ossibility a nd p otential of utilizing the P lasma Optical E mission S pectroscopy(Plasma OES),a s a D evice-Independent characteristic,in the Magnetron-Sputtering deposition of Tantalum Nitride thin films has been studied.Firstly the OES was used to reveal the correlation between the density of active nitrogen species N2+in the plasma and the traditional sputtering parameters.It was shown that increasing the sputtering power can lead to decrease in active nitrogen ratio,hence a shift of parameters to the more Tarich side of the growth window.The relation between input power and the temperature of the plasma was qualitatively determined.Then the structural,morphological and electrical properties of the samples were compared with the OES characteristics to prove its feasibility.

关 键 词：磁控溅射 等离子发射光谱 氮化钽 

分 类 号：TB383[一般工业技术—材料科学与工程]