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作 者:陈之勃[1] 邹颖[1] 申彩英[1] CHEN Zhi-bo;ZOU Ying;SHEN Cai-ying(School of Electronics & Information Engineering, Liaoning University of Technology, Jinzhou 121001, China)
机构地区:[1]辽宁工业大学电子与信息工程学院,辽宁锦州121001
出 处:《辽宁工业大学学报(自然科学版)》2017年第5期284-287,共4页Journal of Liaoning University of Technology(Natural Science Edition)
摘 要:分析了大电流整流电路因整流器引起的散热困难问题和正向电压引起的效率下降问题。提出了采用MOSFET作为整流器件来降低整流器正向电压的可能性。分析了MOSFET工作在整流状态下需要低导通电阻、大电流承受能力和低热阻的特点和目前商用低压MOSFET最新水平。分析了工作在整流器状态的MOSFET导通电阻对导通电压的影响,提出采用极低导通电阻作为100 A级整流器的MOSFET所需要满足的主要参数。最后,通过实验验证了本文提出的方法及理论。This paper analyzes the problems of heat dissipation difficulty by rectifier in high-current rectifier circuit,as well as of efficiency decrease because of forward voltage drop.It indicates the possibility of decreasing rectifier’s forward voltage by utilizing MOSFET as rectifier device.It analyzes the characteristic that low conducting resistance,high current tolerance,and low thermal resistance are needed,MOSFET working as rectifier device,as well as the performance of latest commercial low-voltage MOSFET.It also analyzes while MOSFET working as rectify status,the conducting resistance affects conducting voltage drop.It points out the main parameters will be satisfied MOSFET’s ultra low conducting resistance as100A level rectifier.In the end,the method and theory this paper gives have been proved through the experiment.
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