多层微波集成电路中微带线层间互连仿真  

Simulation of Interconnection between Microstrip Lines in Multilayer Microwave Integrated Circuit

作　　者：姬五胜[1] 姬晓春 孙发坤 刘颖[1] JI Wusheng;JI Xiaochun;SUN Fakun;LIU Ying(Institute of Antenna and Microwave Techniques,Tianjin University of Technology and Education,Tianjin 300222,China)

机构地区：[1]天津职业技术师范大学天线与微波技术研究所,天津300222

出　　处：《电讯技术》2017年第11期1325-1329,共5页Telecommunication Engineering

基　　金：天津职业技术师范大学2014年校级预研项目(KJY14-05)

摘　　要：针对多层微波集成电路设计的微带线层间互连问题,介绍了垂直通孔互连、垂直带条互连和层耦合过渡互连三种高性能的互连方法,并且采用三维电磁仿真软件HFSS对这三种互连结构进行了建模和仿真。仿真结果表明,垂直通孔互连和垂直带条互连在0.1~25 GHz的频宽范围内,回波损耗S11<-20 d B,插入损耗S21>-1 d B,互连性能优良,而层耦合过渡互连在20~68 GHz内回波损耗S11<-20 d B,插入损耗S21>-1 d B,具有在毫米波频段实现互连的潜力。Three microstrip interconnection circuit structures of vertical via interconnection,vertical strip interconnection,and coupling transition between the layers are introduced and simulated for solving the problem of interconnection between microstrip lines in multilayer microwave intergration circuits(MuMICs).The simulation is done by using the3D electromagnetic simulation software HFSS.The simulated result shows that the return loss(S11)and insertion loss(S21)of the vertical via interconnection and the vertical strip interconnection are<-20dB and>-1dB in0.1~25GHz,repectively,showing good connection performance.At the same tim e,the return loss(S11)and insertion loss(S21)of the coupling transition between the layers are<-20dB and>-1dB in20~68GHz,respectively,which shows this method has the potential to be used in millimeter wave bands.

关 键 词：多层微波集成电路 垂直通孔互连 垂直带条互连 层耦合过渡 S参数 

分 类 号：TN454[电子电信—微电子学与固体电子学]