多晶硅晶体生长中固-液界面研究进展  

Research Progress on the Solid-liquid Interface in the Crystal Growth of Polycrystalline Silicon

作　　者：张发云 饶森林 王发辉 龚洪勇 胡云 陈小会 刘俊 ZHANG Fa-yun;RAO Sen-lin;WANG Fa-hui;GONG Hong-yong;HU Yun;CHEN Xiao-hui(Key Laboratory of Jiangxi University for Silicon Materials, Xinyu 338004, China;Institute of New Energy Science and Engineering, Xinyu University, Xinyu 338004, China)

机构地区：[1]江西省高等学校硅材料重点实验室,新余338004 [2]新余学院新能源科学与工程学院,新余338004

出　　处：《人工晶体学报》2017年第10期2077-2082,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51664047);江西省自然科学基金(20132BAB206021)

摘　　要：论述了多晶硅晶体生长技术的研究现状,探讨了多晶硅在定向凝固过程中的生长机制,重点阐述了多晶硅定向生长中固-液界面的形貌、杂质分布、数学模型、数值模拟以及外场对界面调控的影响,归纳总结目前国内外多晶硅生长界面的研究现状,展望了多晶硅晶体生长过程中固-液界面调控技术的发展前景。The development on the crystal growth of polycrystalline silicon as discussed,and the growth mechanism on the poly crystalline silicon during the directional solidification process was analyzed.Then it focuses on the morpholgy of solid-liquid interface,impurity distribution,mathematical model,numerical simulation and the effect of external field on interface-controlled for polycrystalline silicon during the solidification process,and summarizes the research on the interface in the crystal growth of polycrystalline silicon at the domestic and abroad.Finally,the paper proposes the development prospect of solid-liquid interface controlled in the crystal growth of polycrystalline silicon.

关 键 词：多晶硅 界面 定向生长 杂质 外场 

分 类 号：TM914.4[电气工程—电力电子与电力传动]