基于ATE的SRAM测试  

SRAM Testing Based on ATE

作　　者：奚留华 XI Liuhua(China Electronics Technology Corporation No.58 Research Institute, Wuxi 214035, China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《电子与封装》2017年第11期10-14,共5页Electronics & Packaging

摘　　要：随着集成电路技术的飞速发展,SRAM的应用越来越广泛,其测试技术也得到了广泛的重视和研究。简要介绍了SRAM的重要组成部分,提出了一种ATE对SRAM测试的方法。SRAM的测试有功能测试、直流参数测试、交流参数测试,功能测试和交流参数测试对存储器来说是至关重要的。以IS61LV51216-10TLI为例,其功能测试是通过Ultra Edit软件编辑生成测试码,对被测器件各个不同存储单位进行读写操作,以检查其功能。主要论述了SRAM功能及交流参数的测试关键技术及其注意事项。With the rapid development of integrated circuit technology,the application of SRAMis becoming more and more extensive.Testing technology of integrated circuit has been paid more and more attention.The paper briefly introduces the important components of SRAM,and puts forward the way of testing SRAM by ATE.SRAMtesting includes functional testing,DC parameter testing,AC parameter testing.Functional testing and AC parameter testing are essential for memory.For example,functional code testing of IS61LV51216-10TLI is edited by UltraEdit software.Functional code is read and written in the different memory units of the device to check its function.The key technology and precations of function and AC parameters testing of SRAMare mainlystated.

关 键 词：ATE SRAM 测试 功能 交流参数 

分 类 号：TN307[电子电信—物理电子学]