硅各向异性腐蚀的仿真模型研究  

Study on Simulation Model of Anisotropic Etching of Silicon

作　　者：严一峰 方玉明[1] YAN Yifeng;FANG Yuming(School of Electronic Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China)

机构地区：[1]南京邮电大学电子科学与工程学院,江苏南京210023

出　　处：《电子科技》2018年第2期56-60,共5页Electronic Science and Technology

基　　金：江苏省自然科学基金(BK20131380);南京邮电大学大学生创新训练计划项目(XYB2017057)

摘　　要：为了在硅衬底上加工出多样的微结构,满足微机电系统的发展,硅各向异性腐蚀的仿真模型被大量研究。从衬底模型、腐蚀规则的制定、腐蚀速率、时间步长的角度出发,介绍了这些要素对几何模型和原子模型所包含多种仿真方法的模拟精度和模拟效率的影响,归纳了各种仿真方法的适用场合和特点,并为提出更优化的方案提供了方向。其中连续CA方法和MC方法揭示了腐蚀的本质,模拟精度高,三维处理能力强,被广泛应用。而原子模型算法简单,运算速度快,在对结构简单的MEMS仿真中也得到应用。所有仿真方法都可在权衡精度和效率的利弊后做出改进。In order to produce various microstructures on silicon substrate and satisfy the development of MEMS,the simulation model of silicon anisotropic etching has been studied extensively.From the perspective of substrate model,formulation of corrosion rules,corrosion rate,time step,introduces the influence to simulation accuracy and efficiency of simulation of various simulation methods contained in the geometric model and atomic model from these elements,summarizes the application and characteristics of various simulation methods,and provides the direction for putting forward a more optimal solution.Among them,the continuous CA method and the MC method reveal the essence of corrosion.It has high simulation accuracy and strong three-dimensional processing ability,and has been widely used.The atom model algorithm is simple and fast,and it is also applied to the simulation of MEMS with simple structure.All simulation methods can be improved after weighing the pros and cons of accuracy and efficiency.

关 键 词：硅 各向异性腐蚀 仿真方法 模拟精度和模拟效率 

分 类 号：TH773[机械工程—仪器科学与技术]