载流子复合机制对InGaN多量子阱蓝光LED调制带宽的影响  

Effect of Carrier Recombination Mechanism on Modulation Bandwidth of InGaN Multiple-quantum-wells Blue Light Emitting Diodes

作　　者：杨杰 朱邵歆[3] 闫建昌 李晋闽[2] 王军喜[2] YANG Jie;ZHU Shao-xin;YAN Jian-chang;LI Jin-min;WANG Jun-xi(College of Materials Science and Opto-Electronic Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Semiconductor Lighting R&D Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of ICs,China Center for Information Industry Development,Beijing 100846,China)

机构地区：[1]中国科学院大学材料科学与光电技术学院,北京100049 [2]中国科学院半导体研究所半导体照明研发中心,北京100083 [3]中国电子信息产业发展研究院集成电路研究所,北京100846

出　　处：《发光学报》2018年第2期202-207,共6页Chinese Journal of Luminescence

基　　金：北京市科学技术委员会(Z161100002116037)资助项目~~

摘　　要：通过设计InGaN多量子阱LED有源区的不同结构,研究了载流子复合机制对LED调制速度的影响。结果显示,由于窄量子阱LED的载流子空间波函数重叠几率更高,且电子泄露效应更显著,所以复合速率更快,调制带宽更高。In组分为1%的InGaN量子垒LED可提高辐射复合的权重,使得调制带宽高于GaN量子垒LED;In组分为5%时,电子泄露和俄歇复合占据主导地位,且由于这两种复合机制复合速率很快,所以调制带宽显著提高。The effect of carrier recombination mechanism on modulation bandwidth of InGaN MQWs LED was investigated with varying MQWs structures.LED with narrow well has a faster modulation speed because of high radiative recombination rate and carrier leakage.LED sample using InGaN barrier with 1%In content has a higher modulation bandwidth than LED with GaN barrier for the reason of higher radiative recombination rate.While in the case of 5%In content,carrier leakage dominates all the recombination mechanisms and crystal defect related SRH and Auger recombination are also severe.In addition,the rate of SRH and Auger recombination is very high,which leads to fast modulation speed.

关 键 词：发光二极管(LED) 可见光通信 调制带宽 载流子寿命 复合机制 

分 类 号：O47[理学—半导体物理]