3D NAND Flash测试平台设计与实现  

Design and Implementation of 3D NAND Flash Test Platform

作　　者：黄圆 楼向雄[1] 李振华[2] HUANG Yuan;LOU Xiangxiong;LI Zhenghua(School of Communication Engineering,Hangzhou Dianzi University,Hangzhou Zhejiang 310018,China;Institute of Higher Education,Zhejiang Vocational College of Commerce,Hangzhou Zhejiang 310053,China)

机构地区：[1]杭州电子科技大学通信工程学院,浙江杭州310018 [2]浙江商业职业技术学院高教研究所,浙江杭州310053

出　　处：《杭州电子科技大学学报（自然科学版）》2018年第1期38-42,共5页Journal of Hangzhou Dianzi University：Natural Sciences

摘　　要：3D NAND Flash制造工艺的快速发展,在提高存储密度降低成本的同时,也带来了新的存储特性。对3DFlash存储特性的研究,有利于其进一步的应用和发展。采用S281芯片为控制芯设计了3DFlash通用测试平台,实验结果表明,该平台可以实现对所有型号Flash的时序验证,同时还可以用于3DFlash的特性分析,通过实测得到的存储特性数据进一步验证了平台设计的可靠性。With the rapid development of manufacturing technology of 3D NAND Flash,it also brings new storage characteristics while increasing storage density and reducing cost.The research on the storage characteristics of 3D Flash is helpful to its further application and development,using the S281 chip as the control core to design the 3D Flash universal test platform,experimental results show that the platform can be used to verify the timing of all types of Flash,and can also be used to analyze the characteristics of 3D Flash,and through obtaining the measured storage characteristic data,further verify the reliability of the platform design.

关 键 词：3D NAND FLASH 时序验证 存储特性 

分 类 号：TP302[自动化与计算机技术—计算机系统结构]