单轴应变Si NMOS阈值电压模型研究  

Uniaxial Strain Si NMOS Threshold Voltage Model Research

作　　者：王颖 Wang Ying(Infrastructure Management Department,Shaanxi Xueqian Normal University,Xi'an Shaanxi 710100,China)

机构地区：[1]陕西学前师范学院基建处,陕西西安710100

出　　处：《信息与电脑》2017年第6期91-93,共3页Information & Computer

摘　　要：应变Si技术是目前延续摩尔定理,推动集成电路高速发展的重要技术,笔者从单轴应变Si技术提升器件结构出发,基于基本的器件物理方程,建立单轴应变Si器件阈值电压模型,该模型充分考虑了应力、短沟道效应和窄沟道效应对阈值电压的影响,分析了其与阈值电压的相关性,并对模型进行了模拟仿真,结果表明,模型与理论分析结果一致。Strain Si technology is the continuation of Moore theorem,is an important technology that drives the rapid development of integrated circuit.The author embarks from the uniaxial strain Si technology improve device structure,establishes the threshold voltage model of uniaxial strain Si device based on the basic device physical equation.The model takes full account of the effect of stress,short channel effect and narrow channel effect on threshold voltage.Its correlation with the threshold voltage is analyzed,and the model simulation is proceeded,the results show that the model is consistent with the theor etical analysis results.

关 键 词：单轴 阈值电压 模型 

分 类 号：TN386[电子电信—物理电子学]