碳化硅MOSFET开关特性分析及杂散参数优化  

Switching Characteristic Analyses and Stray Parameters Optimization of Silicon Carbide MOSFET

作　　者：柯俊吉 谢宗奎[1] 林伟聪 赵志斌[1] 崔翔[1] KE Junji;XIE Zongkui;LIN Weicong;ZHAO Zhibin;CUI Xiang(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources,North China Electric Power University,Beijing 102206,China)

机构地区：[1]华北电力大学新能源电力系统国家重点实验室,北京102206

出　　处：《华北电力大学学报（自然科学版）》2018年第2期1-9,共9页Journal of North China Electric Power University：Natural Science Edition

基　　金：国家重点研发计划项目(2016YFB0400503)

摘　　要：为改善碳化硅MOSFET开关瞬态特性,最大限度地发挥碳化硅MOSFET性能优势。首先,简单分析了开通电流过冲和关断电压过冲产生机理,并在LTSPICE仿真软件中建立了双脉冲测试回路等效电路模型。仿真结果表明:开通电流过冲和关断电压过冲分别主要取决于上桥臂总杂散电容和回路杂散电感。此外,分析了负载电感的杂散电容与绕制层数的关系。通过Q3D仿真,对比研究了不同直流母排结构以及电容布局方式下的杂散电感。最后基于阻抗分析仪测量,采用谐振频率法计算出负载电感的杂散电容和直流母排的杂散电感。仿真和实验结果均表明:单层负载电感杂散电容最小,环形叠层结构直流母排的杂散电感最小。因此在相同开关速度下,采用优化后的测试平台,器件开关瞬态特性明显得到了改善。The aim of this research is to improve the switching transient characteristics of silicon carbide(SiC)MOSFET and take full advantages of its performance.Firstly,this paper analyzed the inducing mechanism of turn-on current overshoot and turn-off voltage overshoot,and then an equivalent circuit model of double pulse test circuit was established in LTSPICE simulation software.The results show that the turn-on current overshoot and turn-off voltage overshoot are mainly depended on total stray capacitance of the upper bridge and loop stray inductance.In addition,this paper also analyzed the relationship of stray capacitance and the layers of load inductor.With the aid of Q3D simulation,the authors compared the stray inductances of different direct current(DC)bus configurations and capacitance arrangements.Finally,stray capacitance of load inductor and stray inductance of DC bus were calculated by using resonance frequency method based on impedance analyzer.The results show that stray capacitance of single-layer load inductor and stray inductance of laminated busbar with round layout of capacitors have the smallest values.Therefore,with the optimized test bench,the switching transient characteristics of SiC MOSFET are significantly improved under the same switching speed.

关 键 词：碳化硅MOSFET 开通电流过冲 关断电压过冲 杂散参数优化 

分 类 号：TN307[电子电信—物理电子学]