CO2作为单一气相碳氧源制备碳掺杂钛氧薄膜的成分结构性能研究  

Research of Composition and Structure of Carbon Doped Ti-O Films Prepared Using CO_2 as Single Carbon and Oxygen Source

作　　者：魏博 文峰 曹华堂 WEI Bo;WEN Feng;CAO Hua-tang(Key Laboratory of Ministry of Tropic Island Resource&Advanced Materials,School of Materials and Chemical Engineering,Hainan University,Haikou 570228,China;School of Materials Science and Engineering,Shaanxi University of Technology,Hanzhong 723000,China;Department of Advanced Production Engineering,Institute of Engineering and Technology,University of Groningen,Groningen 9747AG,Netherlands)

机构地区：[1]海南大学材料与化工学院,热带岛屿资源先进材料教育部重点实验室,海口570228 [2]陕西理工大学材料科学与工程学院,汉中723000 [3]格罗宁根大学科学与工程学院先进制造工程,格罗宁根9747AG

出　　处：《人工晶体学报》2018年第3期528-533,538,共7页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51461015);海南省重点研发计划(ZDYF2016019)

摘　　要：采用单极脉冲反应磁控溅射,以CO_2作为单一气相碳源和氧源,通过控制反应气体流量,制备了碳掺杂钛氧(C∶Ti-O)薄膜。通过原子力显微镜,拉曼光谱和X射线光电子能谱对薄膜的表面形貌、结构和成分进行了表征,利用紫外可见-分光光度计得到了薄膜的透射光谱并用Tauc作图法计算薄膜的带隙宽度,用纳米力学系统测试了薄膜的力学性能。结果表明,随着CO_2流量的增大,沉积速率呈先增大后减小的趋势。制备的薄膜主要以金红石相存在,并存在少量锐钛矿相和TiO。C的掺入使得C∶Ti-O薄膜的带隙宽度有不同程度的降低,薄膜硬度也有所提高。Carbon-doped titanium oxide(C-Ti-0)thin films were prepared by single-pole pulse reactive magnetron sputtering with controlling the reaction gas flow rate using C02 as the carbon and oxygen source.Raman spectroscopy and XPS were used to characterize the surface morphology,structure and composition of the films.The transmittance spectra of the films were obtained by UV-visible spectrophotometer and the band gap width of the films were calculated by Tauc plotting method.The mechanical properties of the films were tested by nano-mechanic system.The results shows that with the increase of C02 gas flow rate,the deposition rate first increases and then decreases.The prepared films mainly exist in the rutile phase and a small amount of anatase phase and TiO exist in adition.The doping of carbon makes the bandgap width of the Ti-0 thin film decrease to some extent and is beneficial to the increase of the hardness of the films.

关 键 词：反应磁控溅射 Ti-O薄膜 碳掺杂 气相碳氧源 力学性能 

分 类 号：O782[理学—晶体学]