脉冲激光沉积磷掺杂多晶硅薄膜的压阻性能  

The Influence of Phosphorus Content on Piezoresistive Properties of Polycrystalline Silicon Thin Film Synthesized by Pulsed Laser Deposition

作　　者：王思源[1] 王宙[1] 付传起[2] 骆旭梁 张英利 WANG Siyuan;WANG Zhou;FU Chuanqi;LUO Xuliang;ZHANG Yingli(Surface Engineering Centre,Dalian University,Dalian 116622;Institute of Mechanical Engineering,Dalian University,Dalian 116622;Yongan Zhenhai Ningbo Non-destrutice Test Engineering Limited Company,Ningbo 315200)

机构地区：[1]大连大学表面工程中心,大连116622 [2]大连大学机械工程学院,大连116622 [3]宁波市镇海甬安无损检测工程有限公司,宁波315200

出　　处：《材料导报》2017年第A02期150-152,156,共4页Materials Reports

基　　金：金州新区科技计划高新技术研究开发计划.培育专项(2013-GX1-002)

摘　　要：采用脉冲激光沉积法(PLD)制备磷掺杂多晶硅薄膜,研究磷掺杂分数对多晶硅薄膜压阻性能的影响。结果表明,随着磷掺杂分数增大,多晶硅薄膜的应变系数先增大后减小。在磷掺杂分数为0.3%(质量分数)时,电阻横向应变系数的绝对值达到最大,为24.3,电阻纵向应变系数的绝对值达到最大,为12.6。横向电阻应变的非线性在1%~2.5%之间,电阻的温度系数为0.05%/℃,应变系数的温度系数为-0.06%/℃。In this paper,the polycrystalline silicon thin film was prepared on a quartz glass substrate by the PLD(pulsed laser deposition)method,and the effect of phosphorus content on piezoresistive properties of polycrystalline silicon thin film was studied.The results show that with the increase of phosphorus content,the gauge factor of polycrystalline silicon thin film showed a trend of decrease after the first increase.When the phosphorus doping fraction was 0.3wt%,the maximum gauge factors of longitudinal and transverse were 12.6 and 24.3.The nonlinearity of transverse was 1%-2.5%,the temperature coefficient of resistance and the temperature coefficient of gauge factor were 0.05%/℃and-0.06%/℃.

关 键 词：脉冲激光沉积 多晶硅薄膜 磷掺杂 应变系数 

分 类 号：TQ174[化学工程—陶瓷工业]