基于电流反馈的IGBT有源栅极驱动方法研究  

Study of IGBT active gate drive method based on current feedback

作　　者：杜祥 陈权[1,3] 王群京[2,3] 许杭蓬 Du Xiang;Chen Quan;Wang Qunjing;Xu Hangpeng(College of Electrical Engineering and Automation,Anhui University,Hefei 230601,China;National Engineering Laboratory of Energy-Saving Motor&Control Technology,Anhui University,Hefei 230601,China;Power Quality Engineering Research Center of China Ministry,Anhui University,Hefei 230601,China)

机构地区：[1]安徽大学电气工程与自动化学院,安徽合肥230601 [2]安徽大学高节能电机及控制技术国家地方联合实验室,安徽合肥230601 [3]安徽大学教育部电能质量工程研究中心,安徽合肥230601

出　　处：《电子技术应用》2018年第4期33-36,共4页Application of Electronic Technique

基　　金：安徽省高校自然科学基金(KJ2016SD02)

摘　　要：IGBT开关过程中di/dt与du/dt的大小决定着电流过冲、电压过冲和通断损耗的大小。为使IGBT稳定高效工作,提出一种基于di/dt和du/dt反馈的栅极驱动方法,在IGBT开通时,与di/dt成正比的可控电流反馈到栅极;同样,在IGBT关断时,与du/dt成正比的可控电流反馈到栅极。通过调节反馈到栅极的电流值,实现对di/dt与du/dt的控制,从而抑制尖峰电流和过压损坏的产生。仿真及实验结果验证了理论分析的正确性与可行性。The value of di/dt and du/dt determines the magnitude of current overshoot,voltage overshoot and power losses during IGBT switching process.In order to realize IGBT work stably and efficiently,a gate drive method based on the feedback of di/dt and du/dt is proposed in this paper.A controlled current proportional to the di/dt is fed back to the gate when IGBT turn-on袁similarly袁a controlled current proportional to the du/dt is feedback to the gate when IGBT turn-off.The control of di/dt and du/dt is realized by adjusting the feedback current,thus,the overshoot current at turn-on and overvoltage damage at turn-off is obvious鄄ly suppressed.The correctness and feasibility of the theoretical analysis is verified by simulation and experimental results.

关 键 词：DI/DT du/dt 电流过冲 过压损坏 

分 类 号：TN432[电子电信—微电子学与固体电子学]