离子注入和热退火工艺对应变Si材料应力影响研究  

Study on Ion Implantation and Thermal Annealing Effecting on the Stress of Strained Si

作　　者：王颖[1] WANG Ying(Shaanxi Xueqian Normal University,Xi’an 710100,China)

机构地区：[1]陕西学前师范学院,西安710100

出　　处：《电子器件》2018年第1期8-13,共6页Chinese Journal of Electron Devices

摘　　要：应变Si技术是延续摩尔定律最有效技术之一,重点研究了离子注入和热退火过程对应变Si材料中应力的影响,开展了不同离子注入类型、能量和剂量,以及热退火温度和时间对应变Si材料特性影响的实验,并应用拉曼测试对实验结果进行了分析,结果表明:在剂量小于5×10^(14)cm^(-2)时,应变Si材料中的应力几乎不随离子注入的能量与剂量变化;应变Si材料在1 000℃以下,在60 min以内热退火,应力几乎不随温度与时间的变化而变化。Strained Si is used to propose a new way to extend the Moore law.The ion implantation and thermal annealing process affect on the stress of strained Si.An experiment scheme is designed used to study the relation among the stress of strained Si with the type、dose、energy of ion implantation and it with the temperature、time of thermal annealing.Results of Raman scattering show that stress of strained Si is hardly changed at the dose of ion implantation being less than 5×10 14 cm-2,and stress of strained Si is hardly changed within 1 000℃and 60 min.

关 键 词：应变Si材料 离子注入 热退火 拉曼测试 

分 类 号：TN305[电子电信—物理电子学]