反射式倒装对1300 nm激光器性能改善的分析  

Analysis The Performance Improvement of 1 300 nm Laser with Reflective Flip Chip Package

作　　者：薛正群[1,2] 王凌华 苏辉[1] XUE Zheng-qun;WANG Ling-hua;SU Hui(Fujian Institute of Tesearch on The Structure of Matter,Chinese Academy of Sciences,Fuzhou 350002,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院福建物质结构研究所,福建福州350002 [2]中国科学院大学,北京100049

出　　处：《发光学报》2018年第4期534-540,共7页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61405198);国家863计划(2013AA014202)资助项目~~

摘　　要：对AlGaInAs多量子阱1300nmFP激光器进行反射式倒装封装,在热沉上靠近激光器出光端面约10~20μm的区域采用Au反射层,对器件垂直方向出光进行反射。测试结果显示,与常规封装相比,采用这种结构封装芯片垂直发散角从34.5°降低至17°,器件单模光纤的平均耦合功率从1850μW提高至2326μW,耦合效率从21.1%提高到26.5%。对两种激光器进行光电参数的测量,结果表明:与常规封装器件相比,采用反射式倒装结构器件的饱和电流从135mA提高至155mA,饱和输出功率从37mW提高至42mW,热阻从194K/W降低至131K/W。最后对两种器件在95℃环境温度、100mA电流下进行加速老化实验,老化结果显示:在老化条件下,器件衰退系数从常规封装的4.22×10^(-5)降低至1.06×10^(-5),寿命从5283h提高至21027h。AlGaInAs MQWs 1 300 nm FP lasers were packaged p-side down with a reflective submount which had 10-20μm Au film near the facets of laser bare die.Compared to convention package form laser(LD-B),the divergence angle at FWHM of flip chip(LD-A)with a Au reflector decreases from 34.5°to 17°,and the average SMF coupling power increases from 1 850μW to 2 326μW,as the coupling efficiency increases from 21.1%to 26.5%.Compared to LD-B,the saturated current of LD-A increases from 135 mA to 155 mA,the saturated output power increasses from 37 mW to 42 mW,and the thermal resistance decreases from 194 K/W to 131 K/W.Finnaly,the aging experiments are carried out under the condition of 95℃ambient temperature and 100 mA injection current.Compared to LD-B,the degradation coefficient of LD-A under aging condition decreases from 4.22×10-5 to 1.06×10-5,and the lifetime increases from 5 283 h to 21 027 h.

关 键 词：AlGaInAs多量子阱激光器 倒装 Au反射层 发散角 加速老化 

分 类 号：O472[理学—半导体物理] TN248.4[理学—物理]