ICP-OES快速测定CIGS薄膜中主体及掺杂元素  

Determination of copper,indium,gallium,selenium and doped elements(Na) in CIGS thin films by ICP-OES

作　　者：谭立志[1] 陈欣蕊 王星[1] TAN Li-zhi;CHEN Xin-rui;WANG Xing(Tianjin Institute of Power Sources,Tianjin 300384,China)

机构地区：[1]中国电子科技集团公司第十八研究所,天津300384

出　　处：《电源技术》2018年第4期525-526,共2页Chinese Journal of Power Sources

摘　　要：提出了一种测定CIGS薄膜太阳电池材料中铜铟镓硒元素及掺杂元素(钠)的方法。该方法裁取适量面积的薄膜材料,用王水溶解试样,定容后,溶液用电感耦合等离子体原子发射光谱仪(ICP-OES)测定铜铟镓硒主体元素及掺杂金属元素,通过归一化法计算各元素的原子比例。A determination method of copper,indium,gallium,selenium and doped elements(Na)was introduced.The suitable area of CIGS samples was dissolved by aqua fortis.After filtrating,the solution was used to determine copper,indium,gallium,selenium and doped elements(Na)by ICP-OES method.The atomic ratio of each element was calculated by normalization method.

关 键 词：CIGS 掺杂 ICP 归一化法 

分 类 号：TM914[电气工程—电力电子与电力传动]