电路级模拟技术在SRAM型FPGA总剂量效应敏感性预测中的应用  

Application of Circuit Simulation to Total Ionizing Dose Effects Prediction of SRAM-Based FPGA

作　　者：郭红霞[1,2] 丁李利 范如玉[1,2] 姚志斌 罗尹虹[1,2] 张凤祁 张科营[1,2] 赵雯 GUO Hong-xia;DING Li-li;FAN Ru-yu;YAO Zhi-bin;LUO Yin-hong;ZHANG Feng-qi;ZHANG Ke-ying;ZHAO Wen(Northwest Institute of Nuclear Technology,Xi’an 710024,China;State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect,Xi’an 710024,China)

机构地区：[1]西北核技术研究所,西安710024 [2]强脉冲辐射环境与效应国家重点实验室,西安710024

出　　处：《现代应用物理》2018年第1期82-87,共6页Modern Applied Physics

基　　金：国家自然科学基金资助项目(11690043;11605138;61634008)

摘　　要：在分析SRAM型FPGA单元电路及芯片辐照效应实验数据的基础上,借助计算机仿真模拟,研究了大规模集成电路抗辐射性能的敏感性预测技术。采用分层仿真和评价的方法,先由上而下,根据器件参数要求分配性能指标,再依据实验数据,借助数值模拟,由下而上检验性能阈值、裕量及其不确定度,最终给出整个FPGA的可信度值,确定了敏感单元电路,并且通过X射线微束总剂量实验对结果进行验证。建立的电路级数值模拟方法为累积电离总剂量效应敏感性预测研究,提供了技术支撑。Based on experiment results of total ionizing dose effects on fundamental blocks and SRAM-based FPGA,the total ionizing dose effects prediction of large-scale circuits was achieved by means of circuit simulation.The procedure can be summarized as follows.Firsty,the range of electrical parameters in which the devices can work normally was extracted.Second,the values of threshold,margin,and uncertainty were calculated by circuit simulatio.Third,the performance of the whole chip could be predicted and the sensitive blocks were identified.The results were confirmed by the X-ray microbeam experiments.This procedure can be used for predicting the total ionizing dose effects of large-scale circuts.

关 键 词：电子器件 总剂量效应 试验技术 电路模拟 敏感性预测 

分 类 号：TN386.1[电子电信—物理电子学]