功率VDMOS器件热阻测试  

The Testing of Thermal Resistance of Power VDMOS Device

作　　者：单长玲 许允亮 刘琦 田欢 刘金婷 SHAN Chang-ling;XU Yun-liang;LIU Qi;TIAN Huan;LIU Jinting

机构地区：[1]西安卫光科技有限公司,陕西西安710065

出　　处：《机电元件》2018年第2期47-49,共3页Electromechanical Components

摘　　要：功率VDMOS器件的热阻,是衡量输入功率与工作环境热特性的重要参数,在器件研制和系统设计中占有重要地位。从器件的热模型出发,给出了热阻的测试方法。针对二极管正向压降测试所需要的温度系数,分析了数据处理方法,给出提高温度系数计算精度的途径。结合热电偶测量原理,给出了提高热电偶测量精度的方法。所涉及的热阻测量方法,能够为热阻的高精度测量提供基础。The thermal resistance of power VDMOS device is an important parameter to measure the heat feature between the input power and the work environment.It plays an important role in the device development process and the system design process.Based on the device thermal model,the thermal resistance test method is given.Aimed at the temperature coefficient used for the diode forward voltage drop measurement,the way used for improving the temperature coefficient calculation accuracy is given based on data processing method.Based on the principle of thermocouple measurement,the method used for improving the precision of thermocouple measurement is given.The thermal resistance measurement method mentioned above can provide the basis for thermal resistance high precision measurement.

关 键 词：功率VDMOS器件 热特性 热阻 可靠性 

分 类 号：TN784[电子电信—电路与系统]