基体偏压对直流非平衡磁控溅射氮化硅薄膜生长特性的影响  

Effect of substrate bias voltage on growth characteristics of silicon nitride thin film by DC unbalanced magnetron sputtering

作　　者：石志锋[1,2] 郑志雯 宁成云[2] 王迎军[2] SHI Zhi-feng;ZHENG Zhi-weng;NING Cheng-yun;WANG Ying-jun(Medical Device Research and Testing Center,South China University of Technology,Guangzhou 510006,China)

机构地区：[1]华南理工大学医疗器械研究检验中心,广东广州510006 [2]华南理工大学材料学院,广东广州510641

出　　处：《电镀与涂饰》2018年第13期570-575,共6页Electroplating & Finishing

基　　金：国家重点研发计划"华南生物医用材料与植入器械创新示范基地"(2017YFC1105000)

摘　　要：采用高纯硅靶和氮气,以直流非平衡磁控溅射技术在单晶硅表面制备氮化硅薄膜。借助台阶仪、原子力显微镜、红外光谱和X射线光电子能谱考察了基体偏压(-50^-200 V)对氮化硅薄膜沉积速率、表面形貌及元素化学态的影响。结果表明:所得氮化硅薄膜表面光滑,连续致密,均匀。随着样品负偏压的提高,薄膜的生长速率逐渐降低,但当偏压超过-150 V时,薄膜的沉积速率又升高。当基体偏压从-50 V提高到-200 V时,薄膜中Si 2p的峰位向高能端移动了0.41 eV。基片偏压为-150 V时,薄膜生长较为缓慢,但致密,Si─N键含量高。Silicon nitride(Si–N)thin films were prepared on monocrystalline silicon surface by direct current(DC)unbalanced magnetron sputtering technique with highly pure silicon target and nitrogen gas.The effect of substrate bias voltage ranging from-50 V to-200 V on deposition rate and surface morphology of Si–N thin film as well as chemical states of the elements in it was examined using profilometer,atomic force microscope,infrared spectroscope,Raman spectroscope,and X-ray photoelectron spectroscope.It was found that the Si–N thin films are continuous and compact with smooth surfaces.The deposition rate is decreased initially with the increasing of substrate bias voltage,and then increased after-150 V.The Si 2p peak from the thin film prepared at a substrate bias voltage of-200 V shifts towards higher binding energy side by 0.41 eV as compared with that prepared at-50 V.The thin film grows slowly at a substrate bias voltage of-150 V,but features a compact surface with high content of Si─N bonds.

关 键 词：单晶硅 氮化硅薄膜 非平衡磁控溅射 基体偏压 沉积速率 表面形貌 化学态 

分 类 号：TB43[一般工业技术] TG174.444[金属学及工艺—金属表面处理]