磁控溅射制备氮化钽导电薄膜及其性能研究  

Preparation of tantalum nitride conductive film with high resistivity using magnetron sputtering

作　　者：梁军生[1,2] 陈亮 王金鹏 张朝阳 王大志[2] LIANG Junsheng;CHEN Liang;WANG Jinpeng;ZHANG Chaoyang;WANG Dazhi(Key Laboratory for Micro/Nano Technology and System of Liaoning Province,Dalian University of Technology,Dalian 116023,Liaoning Province,China;Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education,Dalian University of Technology,Dalian 116023,Liaoning Province,China)

机构地区：[1]大连理工大学微纳米技术及系统辽宁省重点实验室,辽宁大连116023 [2]大连理工大学精密与特种加工技术教育部重点实验室,辽宁大连116023

出　　处：《电子元件与材料》2018年第8期36-39,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(51675085;51475081)

摘　　要：为了研制应用于超高温薄膜传感器的敏感层,采用直流磁控反应溅射,在硅基底上制备了氮化钽薄膜。研究了氮分压对薄膜微观结构和电阻率的影响。采用X射线衍射仪测试了氮化钽薄膜的物相结构,采用场发射扫描电子显微镜(SEM)观察了薄膜的表面形貌和断面形貌。利用半导体参数测试系统和三维手动探针台测量了氮化钽薄膜的电阻率。结果表明:在2%氮分压下,薄膜的物相结构为Ta N_(0.1),在3%氮分压下,薄膜的物相结构为Ta_2N,而当氮分压在4%~6%的情况下,薄膜的物相结构为Ta N。采用真空烘箱对氮化钽薄膜进行高温热处理。结果表明,薄膜电阻率从(80~433)×10^(-6)Ω·cm提升到了(120~647)×10^(-6)Ω·cm。In order to develop the sensitive layer for ultra-high temperature thin film sensor,tantalum nitride film was prepared on silicon wafer using DC magnetron reaction sputtering.The effects of nitrogen partial pressure on microstructure and resistivity of thin film were studied.The phase structure of the film was tested by X-ray diffractometer.The morphology and cross-section of the film were observed by SEM.The resistivity was measured using a semiconductor parameter test system and a three-dimensional manual probe.Results show that,at 2%nitrogen partial pressure,the film mainly consists of TaN0.1,and Ta2 N at 3%nitrogen partial pressure.It can be transformed into TaN when the nitrogen partial pressure is 4%-6%.Heat treatment of the tantalum nitride was carried out in a vacuum oven.Results indicate that the resistivity of the prepared tantalum nitride film can be increased from(80-433)×10^-6Ω·cm to(120-647)×10^-6Ω·cm after heat treatment.

关 键 词：反应溅射 氮化钽薄膜 氮分压 物相结构 热处理 电阻率 

分 类 号：TN304[电子电信—物理电子学]