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作 者:林新 王斌[1] LIN Xin;WANG Bin(College of Photoelectronic Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,China)
出 处:《电子元件与材料》2018年第8期71-75,92,共6页Electronic Components And Materials
基 金:国家自然科学基金项目(61102026);重庆邮电大学自然科学基金项目(A2015-47)
摘 要:基于FET倍频原理,选取NEC公司型号为NE900100的金属半导体接触势垒场效应晶体管(Metal EpitaxialSemiconductor Field Effect Transistor,M ESFET),采用单扇形偏置电路代替传统高频短路块,同时采用新型四分之一波长交趾耦合滤波器取代传统隔直电容与滤波器,在ADS软件中设计了一种单板X波段微带二倍频器。仿真结果表明,输入功率为10 d Bm时毫米波二倍频器输出功率大于5 d Bm(11.8~12.2 GHz),谐波抑制大于15 d B。实验测试结果验证了该X波段二倍频器用于获取12 GHz频率源的有效性。与传统倍频器相比,此设计提供了一种低成本的设计路线。Based on the principle of FET,an X-band frequency doubler was designed in ADS.During the design,the metal epitaxial-semiconductor field effect transistor(MESFET)NE900100 of NEC company was applied.At the same time,an offset line with single radial stub was applied instead of the traditional offset line and a new type of quarter wavelength two-finger DC-block with matching structure was applied instead of the blocking capacitors and the filter.The simulation results show that the proposed frequency doubler can attain an output power of 5 dBm with more than 15 dB odd-harmonic rejection at an input power of 10 dBm(from 11.8 GHz to 12.2 GHz).According to the measurement results,the X-band frequency doubler is an effective device for acquiring the 12 GHz frequency source.The design in this paper costs lower than the traditional method.
关 键 词:MESFET 单扇形偏置线 交趾耦合滤波器 ADS X波段 二倍频器
分 类 号:TN62[电子电信—电路与系统]
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