石英衬底上GaN薄膜沉积及其光学性能的研究  

Study on the Deposition and Optical Properties of GaN Films at Quartz Substrate

作　　者：张东 赵琰 宋世巍 李昱材 王健 毕孝国 高靖[2] 王春生[2] ZHANG Dong;ZHAO Yan;SONG Shi-wei;LI Yu-cai;WANG Jian;BI Xiao-guo;GAO Jing;WANG Chun-sheng(School of Renewable Eneregy,Shenyang Institute of Engineering,Shenyang 110136,China;State Grid Liaoning Electric Power Supply Co.Ltd.,Shenyang 110004,China)

机构地区：[1]沈阳工程学院新能源学院,辽宁沈阳110136 [2]国家电网辽宁省电力有限公司,辽宁沈阳110004

出　　处：《光谱学与光谱分析》2018年第9期2672-2675,共4页Spectroscopy and Spectral Analysis

基　　金：国家自然科学基金项目(61372195;61304069;51472047);辽宁省科技厅自然科学基金项目(20170540664);辽宁省教育厅科研项目(L2015377);辽宁省教育厅重点实验室基础研究项目(LZ2014050)资助

摘　　要：GaN薄膜材料广泛应用于发光二极管(LED),激光二极管(LD)等光电器件。但是GaN基器件的制备与应用以及器件推广很大一部分取决于其器件的价格,常用的方式是在单晶蓝宝石衬底上沉积制备GaN薄膜样品,单晶蓝宝石衬底晶向择优,可以制备出高质量的GaN薄膜样品,但是单晶蓝宝石衬底价格昂贵,一定程度上限制了其GaN基器件推广使用。如何在廉价衬底上直接沉积高质量的GaN薄膜,满足器件的要求成为研究热点。石英玻璃价格廉价,但是属于非晶体,没有择优晶向取向,很难制备出高质量薄膜样品。本研究采用等离子体增强金属有机物化学气相沉积系统在非晶普通石英衬底上改变氮气反应源流量低温制备GaN薄膜材料。制备之后采用反射高能电子衍射谱、X射线衍射光谱、室温透射光谱和光致光谱对制备的薄膜进行系统的测试分析。其结果表明:在氮气流量适当的沉积参数条件下,所制备的薄膜具有高C轴的择优取向,良好的结晶质量以及优异的光学性能。The GaN thin film materials are widely used in light-emitting diode(LED),laser diode(LD)and other optoelectronic devices.But the preparation and application of GaN based device depends largely on its manufacturing cost.At present,because the single crystal sapphire crystal substrate has been merited,the GaN film are commonly deposited on the single crystalsapphire substrate to achieve the high quality GaN films.And because singlecrystal sapphire substrate is expensive,the GaN devices is limited to use.How to directly deposit high quality GaN films on the cheap substrate and whichone meets the requirements of the device have becomed the research hotspot.Quartz glass is cheap as the substrate,but it is not crystal,and it is difficult to deposite high quality thin film samples on quartz glass substrate.In this study,the preparation of GaN thin film materials was prepared by using plasmaenhanced metal organic chemical vapor deposition method to change the nitrogenreaction source under normal non-stereotyped quartz substrate at the low-temperature deposition.This research adopts the in-situ reflective high energy electron diffraction spectrum(RHEED),X-ray diffraction spectrum(XRD),Transmission Spectra at room temperature(Transmission Spectra)and room TPS to spectroscopy(PL)to analysis the as-grown GaN films.The results show that the as-grownGaN films show the excellent quality crystallization and optical performance under the proper N 2 flux deposition parameters.

关 键 词：GAN薄膜 石英衬底 ECR-PEMOCVD系统 光学性能 

分 类 号：TN304.2[电子电信—物理电子学]