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作 者:李玉婷 代明江[1,2] 李洪 林松盛 石倩 韦春贝 苏一凡 郭朝乾 LI Yu-ting;DAI Ming-jiang;LI Hong;LIN Song-sheng;SHI Qian;WEI Chun-bei;SU Yi-fan;GUO Chao-qian(School of Materials and Energy,Guangdong University of Technology,Guangzhou 510006,China)
机构地区:[1]广东工业大学材料与能源学院,广东广州510006 [2]广东省新材料研究所,现代材料表面工程技术国家工程实验室,广东省现代表面工程技术重点实验室,广东广州510651
出 处:《电镀与涂饰》2018年第16期716-721,共6页Electroplating & Finishing
基 金:广东省科技计划项目(2017A050506037,2017A070701027);2017省院科技创新发展专项(2017GDASCX-0844);2017省院科技创新发展专项(2017GDASCX-0111)。
摘 要:以真空阴极多弧离子镀技术在P(100)型单晶抛光硅衬底和YG6硬质合金上制备了四面体非晶碳(ta-C)薄膜。用扫描电镜(SEM)测量薄膜厚度,并观察其表面及断面形貌;用X射线衍射仪(XRD)分析薄膜的相组成;用拉曼光谱标定薄膜中的sp3键和sp2键;用轮廓仪测量薄膜的表面粗糙度;用划痕法和压痕法测试了膜/基结合强度。在0.5~1.5μm的厚度范围内,随着ta-C薄膜厚度增加,薄膜的sp3键含量逐渐降低,表面碳颗粒数量及尺寸逐渐增加,与YG6基体的结合强度不断降低。0.5μm厚的ta-C薄膜具有最小的表面粗糙度(0.17μm),最高的结合强度(剥离时的临界载荷为61 N,压痕等级为HF2),表现出最优的综合力学性能。Tetrahedral amorphous carbon(ta-C)thin films were prepared on P(100)-type polished single crystal silicon substrate and YG6 cemented carbide by vacuum cathodic multi-arc ion plating.The film thickness was measured by scanning electron microscopy(SEM)and the surface and cross-section morphology of the films were characterized.The phase compositions of the thin films were analyzed by X-ray diffraction(XRD).The sp3 and sp2 bonds were examined by Raman spectroscopy.The roughness of the thin films was measured using a surface profiler.The bonding strength between film and substrate was tested by scratch and indentation methods.The increase of thickness from 0.5μm to 1.5μm decreases the content of sp3 bonds in ta-C thin film gradually,makes the number and size of carbon particles on film surface become larger,and reduces the bonding strength of ta-C thin film on YG6 substrate.The ta-C thin film with a thickness of 0.5μm has the minimum surface roughness(0.17μm)and the maximum bonding strength(characterized by a critical force of 61 N to start peeling and an HF2 grade for the indentation test),showing the optimal comprehensive mechanical properties.
关 键 词:真空阴极多弧离子镀 硬质合金 四面体非晶碳 薄膜 形貌 粗糙度 拉曼光谱 结合强度
分 类 号:TG174.444[金属学及工艺—金属表面处理]
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