γ射线辐照对130nm部分耗尽SOI MOS器件栅氧经时击穿可靠性的影响  

Effects of time-dependent dielectric breakdown reliability of 130 nm partially depleted SOI MOS devices exposed to γ-ray

作　　者：马腾 苏丹丹[1,2,3] 周航 郑齐文[1,2] 崔江维 魏莹[1,2] 余学峰(指导)[1,2] 郭旗[1,2] Ma Teng;Su Dandan;Zhou Hang;Zheng Qiwen;Cui Jiangwei;Wei Ying;Yu Xuefeng;Guo Qi(Key Laboratory of Functional Materials and Devices for Special Environments,Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011,China;Xinjiang Key Laboratory of Electronic Information Material and Device,Urumqi 830011,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院新疆理化技术研究所,中国科学院特殊环境功能材料与器件重点实验室,新疆乌鲁木齐830011 [2]新疆电子信息材料与器件重点实验室,新疆乌鲁木齐830011 [3]中国科学院大学,北京100049

出　　处：《红外与激光工程》2018年第9期203-208,共6页Infrared and Laser Engineering

基　　金：国家自然科学基金(11475255);国家自然科学基金青年科学基金(11505282);中国科学院西部之光项目(2015-XBQN-B-15,XBBS201321)。

摘　　要：研究了γ射线辐照对130 nm部分耗尽(Partially Depleted,PD)绝缘体上硅(Silicon on Insulator,SOI)工艺MOS器件栅氧经时击穿(Time-Dependent Dielectric Breakdown,TDDB)寿命的影响。通过测试和对比辐照前后NMOS和PMOS器件的转移特性曲线、阈值电压、关态泄漏电流以及TDDB时间等电参数,分析了γ射线辐照对PD-SOI MOS器件TDDB可靠性的影响。结果表明:由于γ射线辐照在栅极氧化层中产生了带正电的氧化物陷阱电荷,影响了器件内部势垒的分布,降低了电子跃迁的势垒高度,导致了电子遂穿的正反馈作用增强,从而缩短了器件栅氧化层经时击穿时间,最终造成器件栅极氧化层的可靠性下降。The effects ofγ-ray irradiation on the subsequent time-dependent dielectric breakdown(TDDB)of partially depleted(PD)silicon-on-insulator(SOI)MOS devices were investigated.By testing and comparing the transfer characteristic curves,threshold voltage,off-state leakage current,the TDDB lifetimes and other electrical parameters of the NMOS and PMOS devices before and after irradiation,the effects ofγ-ray irradiation on the TDDB reliability of the devices were analyzed.The results show that the positively charged oxide trap charges induced byγ-ray irradiation in the gate oxide layer affected the distribution of the internal barrier of the device,and reduced the height of the barrier of the electron transition.Therefore,the positive feedback effect of electron tunneling is enhanced and the TDDB lifetime of the device is reduced,resulting in a reliability degradation of the gate oxide of the devices.

关 键 词：场效应晶体管 可靠性 栅氧经时击穿 γ射线 

分 类 号：TN386.5[电子电信—物理电子学]