Eu掺杂GaN薄膜的阴极荧光特性  

Cathodoluminescence of Eu-implanted GaN Thin Films

作　　者：韩晶晶 王晓丹[1] 夏永禄 陈飞飞[1] 李祥 毛红敏[1] HAN Jing-jing;WANG Xiao-dan;XIA Yong-lu;CHEN Fei-fei;LI Xiang;MAO Hong-min(Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics,Suzhou University of Science and Technology,Suzhou 215009,China;Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China)

机构地区：[1]江苏省微纳热流技术与能源应用重点实验室苏州科技大学数理学院,江苏苏州215009 [2]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123

出　　处：《发光学报》2018年第9期1268-1271,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61306004;51002179);江苏省自然科学基金(BK20130263);江苏省十三五重点学科(20168765);苏州科技大学科研基金(XKZ201609);苏州科技大学研究生培养创新工程(SKCX17_034)资助项目~~

摘　　要：通过MOCVD方法在蓝宝石衬底上生长Ga N薄膜,利用离子注入方法将Eu3+离子注入到Ga N基质中。X射线衍射结果表明:经过退火处理后,修复了部分离子注入所导致的晶格损伤。利用阴极荧光光谱可得到Ga N:Eu3+材料在623 nm处有很强的红光发射,该发射峰来源于Eu3+离子的内部4f能级跃迁。另外,Eu3+离子注入会在样品中引入电荷转移态,产生408 nm附近的发光。退火处理有助于获得更强的电荷转移态发光和Eu离子特征发光。Ga N基质的黄光峰与Eu离子之间存在能量交换,将能量传递给Eu离子,促进Eu离子发光。GaN thin films were grown on sapphire substrate by MOCVD method.Eu 3+ions were implanted into GaN thin films by ion implantation.After the films were annealed,the crystal quality was improved partly according to X-ray diffraction measurements.The strong red light emission at 623 nm can be observed in the cathodoluminescence spectrum,and is attributed to the internal 4f transition of Eu 3+ions.In addition,the charge transfer state is introduced by ion implantation,results in a luminescence peak at 408 nm.It is found that annealing can help to promote the charge transfer state luminescence and Eu ions luminescence.There is an energy transfer from the yellow peak of GaN matrix to the Eu ions.

关 键 词：氮化镓 阴极荧光 铕 发光 能量传递 

分 类 号：O482.31[理学—固体物理]