利用KFM研究浮栅结构存储特性的实验设计  

Design of experiment for research on storage properties of floating gate structure by using KFM

作　　者：许杰 刘小花[1] 徐骏[2] Xu Jie;Liu Xiaohua;Xu Jun(College of Electronic and Optical Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China;School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China)

机构地区：[1]南京邮电大学电子与光学工程学院,江苏南京210023 [2]南京大学电子科学与工程学院,江苏南京210093

出　　处：《实验技术与管理》2018年第9期64-66,74,共4页Experimental Technology and Management

基　　金：江苏省自然科学基金项目(BK20160909);江苏省教育科学"十三五"规划青年专项重点课题(2016-ZX0111-00578);南京邮电大学科研启动基金项目(NY215039)

摘　　要：浮栅存储器是一种重要的微电子器件,已得到了广泛的应用。为了使学生在微观尺度下观察和研究浮栅存储结构的存储特性,设计了基于开尔文力显微镜(KFM)的探究性实验。实验内容包括试样准备、KFM测试和结果与讨论等,最后根据KFM测试结果与半导体器件物理知识,定量分析出存储电荷的面密度大小。该实验有助于加深学生对浮栅存储器工作原理的理解,激发学生的学习兴趣,提高学生的研究能力。The floating gate memory is an important microelectronic device,which has been widely used since it is put forward.In order to enable students to observe and study the storage properties of the floating gate structure under the micro scale,an exploratory experiment based on the Kelvin force microscope(KFM)is designed.The experimental content includes the sample preparation,KFM test,results,discussion,etc.Finally,according to the KFM test results and the physical knowledge of semiconductor devices,the surface density of the stored charge is quantitatively analyzed.This experiment is helpful for students to understand the working principle of the floating gate memory,stimulate their interest in learning and train their research and innovative ability.

关 键 词：浮栅存储器 电荷存储 KFM 探究性实验 

分 类 号：TP333-45[自动化与计算机技术—计算机系统结构]