SiC器件在大功率LD驱动源模块中的应用  

Application of SiC power device in high power LD driver

作　　者：贺涛 杨爱武[1] 郑毅[1] 朱虹[1] HE Tao;YANG Ai-wu;ZHENG Yi;ZHU Hong(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2018年第9期1156-1159,共4页Laser & Infrared

摘　　要：介绍了SiC功率器件的应用优势并将其应用到了大功率LD驱动源模块中;对SiC MOSFET的开关参数及特性进行了分析,并设计了一种简单实用的SiC隔离驱动。本文应用SiC器件设计了一款120V/120A全SiC LD驱动源模块,功率模块主电路拓扑采用四路交错并联Buck电路,电路中的开关管和二极管全部使用SiC功率器件,功率模块最高效率达到98%。The advantages of SiC power device is introduced,and it is used for high power LD driver.The switch parameters and dynamic characteristics of the SiC MOSFET were analyzed,then a simple and practical isolated drive circuit was designed.A 120V/120A all-SiC LD driver power module was proposed,and its main circuit uses Four-way interleaving Buck circuits,the switching tube and the diodes in this circuit all use SiC devices.In addition,the maximum efficiency of the all-SiC module can reach up to 98%and it has a high reliability.

关 键 词：碳化硅器件 LD驱动源模块 交错并联Buck 碳化硅驱动电路 

分 类 号：TN386[电子电信—物理电子学]