PCRAM损耗均衡研究综述  

A Survey of Phase Change Random Access Memory Wear Leveling

作　　者：何炎祥[1] 陈木朝 李清安[1] 何静 沈凡凡[1] 帅子琦 徐超 HE Yan-Xiang;CHEN Mu-Chao;LI Qing-An;HE Jing;SHEN Fan-Fan;SHUAI Zi-Qi;XU Chao(Computer School,Wuhan University,Wuhan 430072;State Key Laboratory of Software Engineering,Wuhan University,Wuhan 430072;Information Management Center,Guangdong Communication Polytechnic,Guangzhou 510650;Department of Computer Science,Kennesaw State University,Marietta 30060,USA;School of Technology,Nanjing Audit University,Nanjing 210029)

机构地区：[1]武汉大学计算机学院,武汉430072 [2]广东交通职业技术学院信息管理中心,广州510650 [3]肯尼索州立大学计算机科学系,玛丽埃塔美国30060 [4]南京审计大学工学院,南京210029

出　　处：《计算机学报》2018年第10期2295-2317,共23页Chinese Journal of Computers

基　　金：本课题得到国家自然科学基金(61502346,61462004,61373039,61373039,61462004,61502346,61640220,61662002)、江西省教育厅科技项目(GJJ150605)资助.

摘　　要：随着半导体工艺的高速发展,计算机系统中处理器与主存之间性能差距的不断增大,传统存储器件的集成度已接近极限,能耗问题也日益突出,当前传统的主存技术面临挑战.相变随机存储器(PCRAM)具有集成度高、功耗低、非易失、字节级编址等优良特性,是最有发展潜力的、最有可能完全取代DRAM主存的非易失性存储器之一.首先介绍了PCRAM的发展与应用现状,指出T型结构是当前学术界和产业界广泛采用的器件结构,目前已经有PCRAM产品逐步开始量产并投入商业应用.然后,介绍了PCRAM当前面临的挑战,指出PCRAM面临的写耐久性局限是限制期发展与应用的主要障碍之一,分布不均匀的写操作会使PCRAM快速失效.接着,从硬件辅助和软件辅助两个角度分别介绍了当前研究人员所提出的一些具有代表性的PCRAM损耗均衡技术,在分析和归纳当前研究现状的基础上,指出了现有方案的优点和亟待完善之处.最后,展望了未来PCRAM损耗均衡技术的研究方向,为该领域今后的发展提供参考.With the rapid development of semiconductor technology over the past few decades,the performance gap between CPU and main memory in modern computer systems are increasing substantially.As the traditional technology of main memory integration is close to its limitation,the problem of high energy consumption of main memory is more and more severe and thus the traditional main memory technology widely used is facing challenge.In recent years,Ferroelectric Random Access Memory(FeRAM),Spin-transfer Torque Magnetic Random Access Memory(STT-MRAM),Resistive Random Access Memory(RRAM),Phase Change Random Access Memory(PCRAM)and other new nonvolatile memory with features of non-volatility,low energy consumption,good expansibility and anti shock properties,obtained the widespread attention from both academia and industry.Among them,PCRAM is recognized as one of the most potential and most likely to completely replace the DRAM as a modern computer system memory.This paper first introduces the current development of PCRAM technology.Static Random Access Memory(SRAM),Dynamic Random Access Memory(DRAM),Flash Memory(FLASH),FeRAM,STT-MRAM,RRAM and PCRAM were compared in terms of various aspects.Among these memory technologies,PCRAM has many excellent characteristics,including high integration,low power consumption,non-volatility,and byte level addressing ability.It is pointed out that the T structure is a device structure widely used in both academia and industry,and there have been some PCRAM products put into commercial products in the application.Then,it discusses the main challenges faced by the PCRAM technology,i.e.,limited write endurance of phase change materials with at most 10 8 writes per bit cell before failure.Frequent and high temperature quenching temperature crystallization process will cause the phase change material’s repetitive expansion and contraction,resulting in heating resistance occurred off,which further results in the complete failure of PCRAM storage.Write endurance limitation is one of the main obsta

关 键 词：相变随机存储器 非易失存储器 损耗均衡 硬件辅助 软件辅助 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]