放电等离子体烧结下Nb掺杂量对TiO_2陶瓷靶材性能的影响  

Effect of Nb Doping on the Properties of TiO_2 Ceramic Target under Spark Plasma Sintering

作　　者：赵江涛 沈金城 刘欢 董磊[1,2,3] 王晨 杨海涛[1,2,3] ZHAO Jiang-tao;SHEN Jin-cheng;LIU Huan;DONG Lei;WANG Chen;YANG Hai-tao(Colloege of Materials Science and Engineering,Shenzhen University,Shenzhen 518060,China;Key Laboratory of Functional Materials of Shenzhen,Shenzhen University,Shenzhen 518060,China;Shenzhen Engineering Laboratory of Advanced Technology for Ceramics,Shenzhen University,Shenzhen 518060,China)

机构地区：[1]深圳大学材料学院,深圳518060 [2]深圳大学特种功能材料重点实验室,深圳518060 [3]深圳大学陶瓷制备先进技术工程实验室,深圳518060

出　　处：《硅酸盐通报》2018年第9期2991-2994,3001,共5页Bulletin of the Chinese Ceramic Society

基　　金：深圳市基础研究项目(JCYJ20160422144751573;JCYJ2016 0422104921235;JCYJ 20140418181958489)

摘　　要：采用放电等离子体(SPS)烧结制备了Nb掺杂TiO_2(NTO)陶瓷靶材,运用X射线衍射分析、扫描电子显微镜、四探针测试仪等对NTO陶瓷靶材样品的各性能进行表征。研究了在1100℃下不同Nb掺杂量对NTO陶瓷靶材相对密度、抗弯强度、电阻率、表面形貌与微观结构等性能的影响。实验结果表明:不同Nb掺杂量对NTO陶瓷靶材的性能有显著的影响,在1100℃烧结的NTO陶瓷靶材样品,随着Nb掺杂量的升高,相对密度、抗弯强度和电阻率先增大后逐渐降低,在5wt%掺杂量处均达到了最大值,且此时结晶完好、晶粒大小分布均匀。综合而言,5wt%Nb掺杂量的NTO陶瓷靶材的各项性能表现最优,其电阻率为13.23 mΩ·cm,抗弯强度为139.1 MPa,相对密度达到99.9%。Nb-doped TiO 2(NTO)ceramic targets were prepared by spark plasma sintering(SPS).The properties of NTO ceramic target samples were characterized by X-ray diffraction analysis,scanning electron microscopy and four probe testers.The effect of Nb content at 1100℃on the density,flexural strength,resistivity,surface morphology and microstructure of NTO ceramic target was studied.The experimental results show that the different amounts of Nb doping have a significant effect on the performance of NTO ceramic targets.With the increasing of Nb doping content,the relative density,flexural strength and electrical resistance of NTO ceramic targets sintered at 1100℃first increase and then gradually decreased,at 5wt%doping amount reached the maximum,and at this time the crystal intact,uniform grain size distribution.Taken together,5wt%Nb doped NTO ceramic targets exhibited the best performance with resistivity of 13.23 mΩ·cm,flexural strength of 139.1 MPa and relative density of 99.9%.

关 键 词：陶瓷靶材 掺杂量 SPS烧结 TIO2 

分 类 号：TB43[一般工业技术]