工作压强对SiC空心微球结构及性能的影响  

Effect of Pressure on Composition and Property of SiC Hollow Shell

作　　者：黄景林[1] 何智兵[1] 王涛[1] 唐翠兰[1,2] 杜凯[1] 何小珊[1] HUANG Jinglin;HE Zhibing;WANG Tao;TANG Cuilan;DU Kai;HE Xiaoshan(Research Center of Laser Fusion,China Academy of Engineering Physics, Mianyang 621900,China;School of Materials Science and Engineering,Southwest University of Science and Technology,Mianyang 621010,China)

机构地区：[1]中国工程物理研究院激光聚变研究中心,四川绵阳621900 [2]西南科技大学材料科学与工程学院,四川绵阳621010

出　　处：《原子能科学技术》2018年第10期1897-1903,共7页Atomic Energy Science and Technology

基　　金：中国工程物理研究院超精密加工重点实验室基金资助项目(ZD16002)

摘　　要：采用化学气相沉积(CVD)-高温热解法,在不同工作压强条件下,制备了惯性约束聚变靶用SiC空心微球。利用X射线光电子能谱仪、扫描电子显微镜、白光干涉仪、X射线照相机对SiC空心微球的成分、表面形貌、表面粗糙度、球形度以及壁厚均匀性进行了测试与分析。研究结果表明:随工作压强的增加,SiC空心微球的表面均方根粗糙度先减小后增加,当工作压强为15Pa时,表面均方根粗糙度达到最小值98nm;随工作压强的增加,SiC空心微球的球形度未发生明显变化,且均优于97%;而壁厚均匀性则随工作压强的增加先增加后减小,当压强为15Pa时,壁厚均匀性可达95%。Silicon carbide(SiC)hollow shell was successfully fabricated at different working pressures by chemical vapor deposition(CVD)-pyrolysis,using Si(CH 3)4+C 4H 8+H 2 as the precursor gases.The chemical composition,surface morphology,surface roughness,sphericity and wall thickness uniformity of shells were studied by X-ray photoelectron spectroscopy(XPS),scanning electron microscopy(SEM),white light interferometer(WLI)and X-ray camera,respectively.The results show that the surface root mean square roughness(R q)of SiC firstly decreases then increases with pressure increase.R q decreases to the minimum value of 98 nm when pressure is 15 Pa.Sphericity of SiC does not change significantly with the increase of pressure and the sphericities of all samples are higher than 97%.Wall thickness uniformity of SiC firstly increases then decreases as pressure increases.It increases to 95%when pressure is 15 Pa.

关 键 词：SiC空心微球 压强 成分 表面粗糙度 球形度 壁厚均匀性 

分 类 号：O469[理学—凝聚态物理]