基于GLOBALFOUNDRIES 0.18μm BCDlite^(TM)工艺的微型CMOS五电极垂直型霍尔器件的研究  

Research on Micro-CMOS Five-Contact Vertical Hall Device Based on GLOBALFOUNDRIES 0.18 μm BCDlite^(TM) Technology

作　　者：汤伟 吕飞[2] 张胜 潘红兵[2] 王敦辉[1] TANG Wei;Lü Fei;ZHANG Sheng;PAN Hongbing;WANG Dunhui(School of Physics,Nanjing University,Nanjing 210093,China;School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China)

机构地区：[1]南京大学物理学院,南京210093 [2]南京大学电子科学与工程学院,南京210023

出　　处：《电子器件》2018年第5期1087-1092,1096,共7页Chinese Journal of Electron Devices

基　　金：国家自然基金面上项目(61376075)

摘　　要：为了解决五电极垂直型霍尔器件(5CVHD)电流灵敏度较低以及器件流片迭代周期较长、成本较高的问题,基于GLOBALFOUNDRIES 0.18μm BCDliteTM工艺在有限元分析软件COMSOL中进行器件结构设计和仿真,研究器件结构和工艺参数对5CVHD性能的影响,并且选取代表性参数进行流片与测试。通过仿真和流片实测发现,减小电极长度(w)和探测电极与中间偏置电极距离(d2),增加器件长度(l)以及添加一层P型覆盖层有助于提高5CVHD的性能,当有源区深度为7μm时,2.5μm厚度的P型覆盖层能够改善5CVHD的性能。In order to solve the problem of low current sensitivity,long iteration cycle and high cost of five-contact vertical Hall device(5CVHD),the design and simulation of the device in COMSOL based on GLOBALFOUNDRIES 0.18μm BCDlite TM technology are carried out.The effect of device’s structure and process parameters on the performance of 5CVHD was studied,and representative parameters were selected for fabricating and testing.Through the simulation and measurement,it is found that reducing the length of electrode(w)and the distance between the Sense contacts and the middle Current contacts(d 2),increasing the device’s length(l)and adding P-type layers can help improve the performance of 5CVHD.When the active region depth is 7μm,the 2.5μm P-type layers are appropriate.

关 键 词：霍尔传感器 5CVHD COMSOL 电流灵敏度 器件结构 工艺参数 

分 类 号：TN382[电子电信—物理电子学]