一种新型肖特基整流管设计  

Design of a New Schottky Rectifier Tube

作　　者：闫丽红 王永顺[1] 韩根亮[2] YAN Lihong;WANG Yongshun;HAN Genliang(School of Electronic and Information Engineering,Lanzhou Jiaotong University,Lanzhou 730070,China;Insititute of Sensor Technology,Gansu Academy of Sciences,Lanzhou 730070,China)

机构地区：[1]兰州交通大学电子与信息工程学院,兰州730070 [2]甘肃省科学院传感技术研究所,兰州730000

出　　处：《电子器件》2018年第5期1097-1100,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金项目(61366006);甘肃省科技支撑计划项目(1304GKCA012)

摘　　要：为了提高功率肖特基整流管的反向击穿电压、抗浪涌能力,采取加场限环的方法从有源区参数、外延材料、流片工艺、产品电参数、可靠性等方面进行全面设计,制造了一种新型结势垒肖特基整流管JBS(Junction Barrier Schottky Rectifier)。经测试,器件的电参数水平正向电压VF为0.85 V^0.856 V,反向电流IR为4.0μA^50.5μA,反向电压VR为307.5 V^465.2 V,抗静电水平从低温退火的6 k V^12 k V提高到15 k V。经高温直流老化测试,器件的可靠性达到了预期的设计要求。In order to improve the reverse breakdown voltage of power Schottky rectifier,anti-surge capacity,the method with field limiting ring designed from source area parameters,epitaxial material,chip technology,products electrical parameters,and reliability of the products is adopted to manufacture a new type of junction barrier Schottky rectifier tube(Junction Barrier Schottky Rectifier,JBS).After testing,electricity parametes show the levels of forwards voltage V F,0.85 V^0.856 V;reverse current I R,4.0μA^50.5μA;reverse voltage V R,307.5 V^465.2 V,anti-static level from low temperature annealing of 6 kV^12 kV to 15 kV.After high temperature aging,the level of reliability of electric parameters meet the expected design requirements.

关 键 词：微电子学与固体电子学 结势垒肖特基整流管 反向击穿电压 场限环 

分 类 号：TN35[电子电信—物理电子学]