玉米蛋白质基底上射频磁控溅射法制备Zn O薄膜  

Preparation of ZnO Thin Film on Zein by RF Magnetron Sputtering

作　　者：杨帆 王超[1,2] 周路[1,2] 初学峰[1,2] 闫兴振 王欢[1,2] 郭亮[1,2] 高晓红[1,2] 迟耀丹[1,2] 杨小天[1,2] YANG Fan;WANG Chao;ZHOU Lu;CHU Xue-feng;YAN Xing-zhen;WANG Huan;GUO Liang;GAO Xiao-hong;CHI Yao-dan;YANG Xiao-tian(Jilin Provincial Key Laboratory of Architectural Electricity&Comprehensive Energy Saving, Jilin Jianzhu University,Changchun 130118,China;School of Electrical Engineering and Computer,Jilin Jianzhu University,Changchun 130118,China)

机构地区：[1]吉林建筑大学吉林省建筑电气综合节能重点实验室,吉林长春130118 [2]吉林建筑大学电气与计算机学院,吉林长春130118

出　　处：《发光学报》2018年第10期1431-1438,共8页Chinese Journal of Luminescence

基　　金：国家自然科学基金(51672103);吉林省科技厅科研项目(20160204069GX;20170101111JC;20170520169JH);吉林省教育厅科研项目(JJKH20170243KJ;JJKH20170241KJ)资助~~

摘　　要：采用射频磁控溅射方法在蛋白质基底上成功地制备了ZnO薄膜,研究了不同靶基距、氩氧比和溅射功率条件对ZnO薄膜性质的影响。结果表明,较小的靶基距有助于ZnO薄膜的c轴择优取向生长。我们还发现,沉积于玉米蛋白质基底的ZnO薄膜存在不同程度的张应力,当Ar/(Ar+O2)为0.7时,ZnO薄膜内的张应力最小。ZnO近带边发光峰有不同程度的红移,我们认为,这是由于晶界势垒和氧空位Vo造成的。随着溅射功率的增大,薄膜生长速率显著加快,晶粒尺寸增大,ZnO的近带边发光峰位逐渐趋向于理论值。ZnO films were deposited on zein by radio frequency(RF)magnetron sputtering technique.We investigated the influences of deposition parameters,such as target-to-substrate distance,Ar/O 2 ratio and sputtering power on the properties of ZnO films.The results show that c-axis preferred orientation of ZnO films is obtained at small target-to-substrate distance.We also find that ZnO films deposited on zein is in a state of tensile stress,whereas the film deposited at Ar/(Ar+O 2)ratio of 0.7 has the lowest tensile stress.The near-band-edge peaks of ZnO films in photoluminescence spectra show blueshifts.We speculate that the blueshifts are caused by the oxygen vacancy and the electrostatic potentials that exist at the grain boundaries.As the sputtering power increases,the deposition rate and the grain size of ZnO films increase,the near-band-edge peak of ZnO film shifts toward the theoretical value gradually.

关 键 词：氧化锌薄膜 玉米蛋白膜 磁控溅射 X射线衍射 光致发光谱 

分 类 号：TN209[电子电信—物理电子学]