SiN-SiC纳米薄膜自旋相关的塞贝克效应研究  

Spin-dependent Seebeck Effect of the SiN-SiC Nano Thin Film

作　　者：李强[1,2] 杨贝贝 左安友[1,2] 杨永明[1,2] LI Qiang;YANG Bei-bei;ZUO An-you;YANG Yong-ming(School of Advanced Materials and Mechatronic Engineering,Hubei University for Nationalities,Enshi 445000,China;Institute of University-industry Cooperation for Advanced Material Forming and Equipment,Hubei University for Nationalities,Enshi 445000,China)

机构地区：[1]湖北民族学院新材料与机电工程学院,恩施445000 [2]湖北民族学院,新材料成型及装备技术产学研中心,恩施445000

出　　处：《人工晶体学报》2018年第8期1705-1710,共6页Journal of Synthetic Crystals

基　　金：湖北省自然科学基金(2014CFB619,2014CFB342);湖北民族学院博士科研启动基金(MY2012B006);湖北民族学院院内青年科研基金(MY2017Q006)。

摘　　要：热自旋电子学结合了自旋电子学和热电子学各自优势,对人类可持续发展具有十分重要的作用。本文提出了一种基于SiN-SiC纳米薄膜的新型热自旋电子学器件。发现在源极和漏极之间施加温度场,可以获得方向相反、大小几乎相同的具有自旋极化取向的电流,即为自旋相关塞贝克效应。而且,在热电荷流中还存在着热负微分电阻效应。这些发现为设计基于SiN-SiC纳米薄膜的高效率热自旋电子学器件提供了理论指导。Spin caloritronics devices,a multifunctional device combining spintronics and caloritronics,are very important for sustainable development of human.Here,a new spin caloritronics device based on the SiN-SiC nano thin film were proposed.Spin-up and spin-down currents flowing in opposite directions due to the temperature gradient between the source and the drain were demonstrated.The results show that the spin-up and spin-down currents present nearly equal magnitudes,indicating a spin-dependent Seebeck effect.Moreover,a negative differential thermoelectric resistance can be obtained in the thermal electron current.Our results indicate that the SiN-SiC nano thin film can be designed as a highly-efficient spin caloritronics device.

关 键 词：自旋相关塞贝克效应 SiN-SiC纳米薄膜 热自旋电子学器件 

分 类 号：O472[理学—半导体物理]