基于Si IGBT/SiC MOSFET的混合开关器件综述  

Summary of Si IGBT/SiC MOSFET based hybrid switching device

作　　者：宁圃奇[1,2,3,4] 李磊 曹瀚[1,2,3,4] 温旭辉[1,2,3,4] NING Pu-qi;LI Lei;CAO Han;WEN Xu-hui(Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China;Key Laboratory of Power Electronics and Electric Drive,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;Collaborative Innovation Center of Electric Vehicles in Beijing,Beijing 100081,China)

机构地区：[1]中国科学院电工研究所,北京100190 [2]中国科学院电力电子与电气驱动重点实验室,北京100190 [3]中国科学院大学,北京100049 [4]北京电动车辆协同创新中心,北京100081

出　　处：《电工电能新技术》2018年第10期1-9,共9页Advanced Technology of Electrical Engineering and Energy

基　　金：国家重点研发计划项目(2016YFB01006024)

摘　　要：综述了基于Si IGBT/SiC MOSFET的混合开关器件,总结了相关的门极驱动时序、门极驱动硬件设计、电流分配优化、功率模块设计、变频器设计和成本分析等要素。该类混合开关器件可以实现Si IGBT的零电压开通和零电压关断,大幅缩短Si IGBT的拖尾电流时间,降低开关损耗,并可实现高频运行。该类混合开关器件还利用了Si IGBT的导通特性优势,与同规格纯SiC器件相比成本大幅降低。部分文献的仿真与实验结果验证了该类器件的优异特性,所开发的示范性样机具有较高使用价值,一定程度上可满足同时需求高频开关和中、大功率的应用。This paper summarized Si IGBT/SiC MOSFET based hybrid switch(HyS)from literatures.The related gated drive pattern,gate drive hardware,current sharing optimization,module design,converter design and cost are introduced and commented in this paper.In HyS,Si IGBTs can realize zero voltage switching(ZVS),and the tailed current can be reduced.ZVS can reduce power loss and increase the switching frequency.HyS also combines low conduction loss and low cost of Si IGBT.The promising high performances of HyS will bring considerable achievement to enhance power frequency and high power converter systems.

关 键 词：碳化硅芯片 混合开关 门极驱动 功率模块 变频器 

分 类 号：TM341[电气工程—电机]