半导体器件内离子有效LET值测量方法研究  

Study of Measurement of the Ion Effective LET in Semiconductor Devices

作　　者：史淑廷[1] 郭刚[1] 刘建成[1] 蔡莉[1] 陈泉[1] 沈东军[1] 惠宁[1] 张艳文[1] 覃英参 韩金华[1] 陈启明[1] 张付强 殷倩 肖舒颜 SHI Shu-ting;GUO Gang;LIU Jian-cheng;CAI Li;CHEN Quan;SHEN Dong-jun;HUI Ning;ZHANG Yan-wen;QIN Ying-can;HAN Jin-hua;CHEN Qi-ming;ZHANG Fu-qiang;YIN Qian;XIAO Shu-yan(Department of Nuclear Physics,China Institute of Atomic Energy,National Innovation Center of Radiation Application,Beijing 102413,China)

机构地区：[1]中国原子能科学研究院核物理所,国防科技工业抗辐照应用技术创新中心,北京102413

出　　处：《电子学报》2018年第10期2546-2550,共5页Acta Electronica Sinica

基　　金：国家安全重大基础研究计划子专题(No.6132240302-1);国家自然科学基金青年基金(No.11105230)。

摘　　要：提出了一种基于电荷收集测试技术的离子有效LET值测量方法.首先对半导体器件内收集电荷量与入射离子有效LET值之间的关系进行了分析,根据二者之间的关系提出通过测量电荷收集量从而测量离子有效LET值的方法;然后建立了半导体器件电荷收集测试系统,利用PN结和SRAM对测量方法进行了验证;最后成功利用该方法解释了以往单粒子效应实验中出现的数据异常.An effective LET of incident ions measurement method based on charge collection test technique is proposed.Firstly,the relationship between effective LET and amount of collected charge caused by incident ions in semiconductor devices analyzed,and according to the relationship the effective LET measurement method is raised.Then a semiconductor device charge collection test system is established and the effective LET test method is verified utilizing PN junction and SRAM.Finally,the effective LET in a semiconductor device that has abnormal Single Event Upset cross-section data is measured and find the reason for the abnormal data.

关 键 词：单粒子效应 电荷收集 有效LET值 SRAM 

分 类 号：TL84[核科学技术—核技术及应用] O571.6[理学—粒子物理与原子核物理]