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作 者:陈鹏[1] 蒋均[1] 邓贤进[1] CHEN Peng;JIANG Jun;DENG Xianjin(Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang Sichuan 621999,China)
机构地区:[1]中国工程物理研究院电子工程研究所,四川绵阳621999
出 处:《太赫兹科学与电子信息学报》2018年第5期763-766,共4页Journal of Terahertz Science and Electronic Information Technology
摘 要:介绍了一个基于平面肖特基二极管的220GHz倍频器。该倍频器工作在室温下,结构简单。为了实现倍频,将一个具有4个反向串联肖特基结的变容二极管安置在石英基片上,直流偏置通过一个石英微带构成的低通滤波器加到二极管上。所有的石英电路基片都用导电胶粘接在波导腔体上,波导腔体是E面剖分的,表面镀金。220GHz倍频器的测试结果表明,在选择合适的偏置电阻时,该倍频器具有15 mW的输出功率和5%的效率。在213~230GHz频段,二倍频器的输出功率均在10 mW以上,且带内的功率波动非常小。The development of a 220 GHz frequency doubler based on GaAs plannar Schottky diodes is described.The doubler works at room temperature,and its structure is very simple.A plannar Schottky varactor flip chip with four anodes arranged in anti-series is mounted onto a quartz based microstrip circuit to realize frequency multiplication.DC bias is put on the varactor through a low-pass filter circuit which is also constructed on a quartz microstrip.All the quartz circuits are glued into the waveguide block with conductive adhesive.The block is split in the E-plane and its surface is gold plated.Test data for the 220 GHz doubler show 15 mW output power with 5%efficiency when appropriate external bias resistor is selected.Over the 213-230 GHz,the output power of the doubler is above 10 mW,and the power fluctuation in this band is very small.
分 类 号:TN771[电子电信—电路与系统]
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