交联PMMA修饰的PVA绝缘层对P3HT有机场效应晶体管性能的影响  

Influence of PVA Insulator Modified with Cross-linked PMMA on The Performance of P3HT OFETs

作　　者：张华野 张帆[1] 张猛[1] 娄志东[1] 滕枫[1] ZHANG Hua-ye;ZHANG Fan;ZHANG Meng;LOU Zhi-dong;TENG Feng(Key Laboratory of Luminescence and Optical Information,Ministry of Education,Institute of Optoelectronic Technology,Beijing Jiaotong University,Beijing 100044,China)

机构地区：[1]北京交通大学光电子技术研究所发光与光信息教育部重点实验室,北京100044

出　　处：《发光学报》2018年第11期1542-1548,共7页Chinese Journal of Luminescence

基　　金：国家重点研发计划(2016YFB0700703);国家自然科学基金(61475014;61674012;61675018)资助项目~~

摘　　要：利用1,6-二(三氯甲硅烷基)己烷(C_6-Si)交联的聚甲基丙烯酸甲酯(C-PMMA)修饰聚乙烯醇(PVA)绝缘层(C-PMMA/PVA),并研究了修饰前后绝缘层的表面性质和电学性能。结果表明:经C-PMMA修饰后,虽然绝缘层表面粗糙度从0.386 nm增加到0.532 nm,电容由14.2 n F/cm^2减小到11.5 n F/cm^2,但绝缘层的水接触角显著变大,从36°增加到68°,表明修饰后表面极性显著下降;此外,C-PMMA修饰的绝缘层的漏电流密度降低了约2个数量级。用纯PVA和C-PMMA修饰的PVA两种绝缘层制备了具有底栅顶接触结构的3-己基噻吩(P3HT)有机薄膜场效应晶体管,C-PMMA修饰PVA后器件性能显著提高,开关比提高了约20倍,迁移率增大了约4倍,分别达到~10~2cm^2·V^(-1)·s^(-1)和3.3×10^(-2)cm^2·V^(-1)·s^(-1),而且回滞现象明显降低。The surface and electrical characteristics of the bare poly(vinyl alcohol)(PVA)and PVA modified with cross-linked poly(methyl methacrylate)(C-PMMA)by 1,6-bis(trichlorosilyl)hexane(C 6-Si)(C-PMMA/PVA)were studied.The surface roughness increases from 0.386 nm to 0.532 nm,and the capacitance drops to 11.5 nF/cm^2 from 14.2 nF/cm^2 by the cross linking,however,the contact angle of water is greatly raised from 36°to 68°,indicating that the surface polarity of PVA is remarkably decreased by the modification of C-PMMA.Additionally,the leakage current of the C-PMMA-modified PVA layer is reduced by about 2 orders of magnitude.The C-PMMA/PVA as well as bare PVA insulating layers are utilized to fabricate organic field-effect transistors(OFETs)based on 3-hexyl thiophene(P3HT)with a bottom gate/top contact configuration.The performance of the device with the C-PMMA/PVA insulating layer is significantly improved,with the on/off ratio increased by 20 times and the mobility increased by 4 times,reaching^10^2 cm^2·V^-1·s^-1 and 3.3×10^-2 cm^2·V^-1·s^-1,respectively.Furthermore,the hysteresis of the P3HT OFET,which mainly originates from the high surface polarity of the PVA insulating layer,is reduced dramatically by the modification of a very thin C-PMMA film.

关 键 词：界面修饰 交联 有机薄膜场效应晶体管 回滞 

分 类 号：O47[理学—半导体物理]