磁控溅射Sn和CuS靶制备铜锡硫薄膜电池  

Fabrication of Cu_2SnS_3 Thin Films Solar Cells by Magnetron Sputtering Sn and CuS Targets

作　　者：徐信[1] 王书荣[1] 陆熠磊 杨帅[1] 李耀斌 唐臻 杨洪斌 XU Xin;WANG Shu-rong;LU Yi-lei;YANG Shuai;LI Yao-bin;TANG Zhen;YANG Hong-bin(Yunnan Key Laboratory of Opto-electronic Information Technology,Key Laboratory of Rural Energy Engineering in Yunnan,Yunnan Normal University,Kunming 650500,China)

机构地区：[1]云南师范大学云南省农村能源工程重点实验室,云南省光电信息技术重点实验室,云南昆明650500

出　　处：《发光学报》2018年第11期1557-1564,共8页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61167003);西南地区可再生能源研究与开发协同创新项目(05300205020516009)资助。

摘　　要：为了验证采用金属单质靶与硫属化合物靶混合溅射法制备Cu_2Sn S_3(CTS)薄膜及太阳电池的可行性,在镀钼的钠钙玻璃上通过磁控溅射Sn和Cu S靶制备CTS预制层后,再经过低温合金化和高温硫化过程制备CTS薄膜,研究了硫化过程中不同升温速率对CTS薄膜表面形貌的影响。采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)及配属的能谱仪(EDS)、拉曼散射(Raman)对薄膜的晶体结构、表面和截面形貌、薄膜组分、物相进行表征分析,利用紫外-可见光光度计和霍尔测试系统表征了薄膜的光电特性。在硫化升温速率为35℃/min的条件下,获得了表面致密平整且纯相的单斜结构CTS薄膜,并用CTS薄膜制备了太阳电池。随后在标准测试条件(AM1.5,100 m W/cm^2,300 K)下采用KEITHLEY的2400数字源表测试了电池的I-V特性,其开路电压为299 m V,短路电流密度为16.6 m A/cm^2,光电转换效率为1.18%。结果表明,采用磁控溅射金属单质靶Sn与硫属化合物靶Cu S有望制备出高效CTS薄膜太阳电池。In order to verify the feasibility of preparing Cu2SnS3(CTS)thin films and solar cells by hybrid sputtering single metal target and chalcogenide targets,CTS precursors were deposited on Mo-coated SLG substrate by magnetron sputtering Sn and CuS targets.Then,the precursors were alloyed at low temperature and sulfurized at high temperature sequentially to form CTS films.Meanwhile,the effects of different heating rate during sulfurization on CTS morphology were investigated.Structural,morphological,compositional and phases features of the films were investigated using X-ray diffraction(XRD),scanning electron microscope(SEM)equipped with an energy dispersive X-ray spectroscopy(EDS),Raman spectroscopy(Raman),respectively.Meanwhile,the optical-electrical properties of the films were characterized by UV-Vis-INR and Hall measurement system.Finally,monoclinic structure of CTS thin film with pure phase,smooth and compact surface was obtained under a condition of heating rate of 35℃/min during sulfurization process.Then,the current-voltage(I-V)of the solar cells was carried out under the standard test conditions(AM1.5,100 mW/cm^2,300 K)using a Keithley 2400 sourcemeter.The conversion efficiency of the fabricated CTS film solar cells was 1.18%with an open-circuit voltage of 299 mV,a short-circuit current density of 16.6 mA/cm^2.In conclusion,it is expected to fabricate high efficient CTS thin film solar cells by magnetron sputtering single metal target Sn and chalcogenide targets CuS.

关 键 词：Cu2SnS3薄膜 磁控溅射 硫化 太阳电池 

分 类 号：TM914[电气工程—电力电子与电力传动]