LaAlO_3/GaAs异质结界面的空穴导电行为分析  

Hole conduction behavior at the heterojunction interface of LaAlO_3/GaAs

作　　者：毛田田 廖锡龙 杨云龙 荔静 熊昌民[2] 王登京[1] Mao Tiantian;Liao Xilong;Yang Yunlong;Li Jing;Xiong Changmin;Wang Dengjing(College of Science,Wuhan University of Science and Technology,Wuhan 430065,China;Department of Physics,Beijing Normal University,Beijing 100875,China)

机构地区：[1]武汉科技大学理学院,湖北武汉430065 [2]北京师范大学物理学系,北京100875

出　　处：《武汉科技大学学报》2018年第6期429-433,共5页Journal of Wuhan University of Science and Technology

基　　金：国家自然科学基金资助项目(11474024)

摘　　要：采用脉冲激光沉积方法在GaAs(001)单晶基片上生长LaAlO_3薄膜构成LaAlO_3/GaAs异质结,利用原子力显微镜和XRD对LaAlO_3/GaAs异质结进行表征,并通过PPMS对LaAlO_3/GaAs异质结进行面内电阻和霍尔电阻测试,研究其界面电输运性能。结果表明,LaAlO_3在GaAs表面生长均匀,LaAlO_3/GaAs异质结界面处存在空穴型的导电行为,且该空穴来源于界面处的悬空键效应。LaAlO 3/GaAs heterojunctions were formed on GaAs(001)single crystal substrate by pulsed laser deposition method and characterized by atomic force microscope and XRD.The sheet resistance and Hall resistance of LaAlO 3/GaAs heterojunctions were tested by PPMS to study their interface electrical transport performance.The results show that LaAlO 3 grows uniformly on the surface of GaAs,hole pattern conductive behavior exists at the LaAlO 3/GaAs heterojunction interface,and the hole results from the suspension bond effect at the interface.

关 键 词：LAALO3 GAAS 异质结界面 空穴导电 电输运 

分 类 号：O469[理学—凝聚态物理]