InGaAsP多量子阱双稳态激光器的实验及理论研究  

Experimental and theoretical study of the bistable InGaAsP multi-quantum-well lasers

作　　者：徐玉兰[1,2] 林中晞 陈景源[1,2] 林琦[1,2] 王凌华 苏辉[1] Xu Yulan;Lin Zhongxi;Chen Jingyuan;Lin Qi;Wang Linghua;Su Hui(Laboratory of Laser Engineering and Technology,Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences,Fuzhou 350002,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院福建物质结构研究所激光工程技术研究室,福建福州350002 [2]中国科学院大学,北京100049

出　　处：《红外与激光工程》2018年第11期114-119,共6页Infrared and Laser Engineering

基　　金：国家自然科学基金(61405198);国家863计划(2013AA014202);福建省自然科学基金(2014J06022);国家重点研发计划(2016YFB0402300;2016YFB0402304)

摘　　要：从实验和理论上研究了InGaAsP多量子阱(Multi-Quantum-Well,MQW)双区共腔(Common Cavity Tandem Section, CCTS)结构半导体激光器的吸收区偏置状态对双稳态特性的影响。实验结果表明:随着可饱和吸收区上的负偏置电压的增大,激光器P-I曲线中双稳态特性更加明显,V-I曲线有负微分电阻,当偏压加至-3 V时,回滞曲线环宽度增加至13.5 mA,开关比达到21:1。理论分析表明,利用吸收区的高负偏置态和短载流子逃逸时间能获得更好的双稳态特性。最大107:1的开关比也说明双区共腔激光器能在两稳态之间实现非常明确的转换。Influences of the bias states of saturable absorbers on bistable InGaAsP multi-quantum-well(MQW)common cavity tandem section(CCTS)semiconductor lasers were investigated experimentally and theoretically.The experiment demonstrated thatthe bistability characteristic of P-I curves can be more significant with increasing reversed bias voltage in the saturable absorber(SA),and a negative differential resistance phenomenon was found in V-I curves.When the voltage was-3 V,the hysteresis width was broadened to 13.5 mA,with the on-off ratio up to 21:1.The theoretical analysisproves thathigher passive voltage in SA and shorter carrier escape time can result in better bistability.The maximum on-off ratio as high as 107:1 promises that a common cavity two-section laser can be switching between the two-steady state.

关 键 词：双稳态 半导体激光器 双区共腔 回滞曲线环 开关比 

分 类 号：TN248[电子电信—物理电子学]