电流源型驱动在高功率密度IGBT5中的应用研究  

Applied Research of Current Source Driver in High Power Density IGBT5

作　　者：秦海洋 郑姿清 赵振波 王天真[1] 李佳旭 QIN Haiyang;ZHENG Ziqing;ZHAO Zhenbo;WANG Tianzhen;LI Jiaxu(Logistics Engineering College,Shanghai Maritime University,Shanghai 200120,China;Infineon Technologies China Co.,Ltd,Shanghai 200120,China;State Grid Anshan Electric Power Supply Company,Anshan 114000,China)

机构地区：[1]上海海事大学物流工程学院,上海200120 [2]英飞凌科技(中国)有限公司,上海200120 [3]国家电网鞍山供电公司,鞍山114000

出　　处：《电源学报》2018年第6期159-165,共7页Journal of Power Supply

基　　金：国家自然科学基金资助面上项目(61673260);上海市自然科学基金资助项目(16ZR1414300)~~

摘　　要：绝缘栅双极型晶体管IGBT(insulated gate bipolar transistor)的不断发展也推动着驱动技术的发展。为了减小高功率密度IGBT开通损耗以及优化电流变化率di/dt,提升系统的功率密度和能量转换效率,使用一种具有转换速率控制功能的驱动芯片设计电流源型驱动。通过双脉冲实验平台进行测试,将结果与传统的电压源型驱动测试的结果进行对比、分析,从而验证该电流源型驱动在减小开通损耗和优化电流变化率di/dt方面的优势,为驱动电路的研究与设计提供参考。The development of insulated gate bipolar transistor(IGBT)is promoting the development of driver tech-nology.To reduce the turn-on losses of high power density IGBT,optimize the current slew rate di/dt,and improve the power density and energy conversion efficiency of the system,a current source driver was designed using a driver integrated circuit(IC)with a function of slew rate control.A test was conducted on a double-pulse experimental platform,and the results obtained using the novel driver were compared with those using the traditional voltage source driver,which verified that the proposed current source driver had advantages in reducing turn-on losses and optimizing the current slew rate di/dt.The results in this paper provide reference for the research and design of driver circuit.

关 键 词：高功率密度 IGBT 电流源型驱动 开关损耗 

分 类 号：TN386.2[电子电信—物理电子学]