0.11～0.18μm半导体制造IMD气泡解决方案  

Study on Semiconductor IMD Bubble Solution in 0.11 to 0.18 μm

作　　者：曹琛 段力 CAO Chen;DUAN Li(School of Microelectronics,Shanghai Jiaotong University,Shanghai 200240,China)

机构地区：[1]上海交通大学微电子学院,上海200240

出　　处：《集成电路应用》2018年第12期17-18,26,共3页Application of IC

摘　　要：自2000年以来, 0.11～0.18μm晶圆制造开始大规模使用HDP FSG作为IMD架构的主要工艺,但在生产过程中出现的IMD气泡缺陷极大的影响了半导体生产的良率。结合当今集成电路生产的实际情况,在多个方面对IMD气泡的具体表现作了较为详尽的分析,并从缺陷的成因,具体影响因素,薄弱工艺环节进行分析说明,并透过设计实验进行验证,寻找导致缺陷产生的具体因子,推测并验证失效模型,并提出具体的解决方案,从源头预防缺陷的产生,有效的提升了晶圆生产的良率。Since 2000,HDP FSG has been widely used as the main technology of IMD architecture in 0.11~0.18μm wafer fabrication.The IMD bubble defects in the production process greatly affect the yield of semiconductor production.In this paper,the specific manifestations of IMD bubbles are analyzed in detail in many aspects according to the actual situation of IC production.The causes of the defects,specific factors and weak technological links are analyzed and explained.Through design experiments,the specific factors causing defects are found,and the failure model is inferred and verified.Specific solutions are proposed to prevent defects from the source,which effectively improves the yield of wafer production.

关 键 词：集成电路制造 晶圆生产 IMD气泡 HDP FSG 

分 类 号：TN405[电子电信—微电子学与固体电子学]