中心距10 μm截止波长2.6 μm的延伸波长InGaAs焦平面探测器(英文)  被引量:1

InGaAs focal plane array with the sub-10 μm pixel pitch and 2.6 μm cut-off wavelength

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作  者:何玮 李平[1,2,3] 邵秀梅 曹高奇[4] 于一榛 张亚光 邓双燕 杨波 李雪[1,2] 李淘[1,2] 龚海梅[1,2] HE Wei;LI Ping;SHAO Xiu-Mei;CAO Gao-Qi;YU Yi-Zhen;ZHANG Ya-Guang;DENG Shuang-Yan;YANG Bo;LI Xue;LI Tao;GONG Hai-Mei(State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai200083,China;Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai200083,China;University of Chinese Academy of Sciences,Beijing100049,China;Fudan University,Shanghai200433,China)

机构地区:[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 [2]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083 [3]中国科学院大学,北京100049 [4]复旦大学,上海200433

出  处:《红外与毫米波学报》2018年第6期649-652,共4页Journal of Infrared and Millimeter Waves

基  金:Supported by the National Key R&D Program of China(2016YFB0402401);National Natural Science Foundation of China(61376052,61475179,61604159)

摘  要:采用ICP(inductively coupled plasma etching)刻蚀与湿法腐蚀相结合的方式,研制了像元中心距为10μm、截止波长2. 6μm的p-i-n型10×10元延伸波长In Ga As探测器.不同温度下的电流—电压特性研究和激活能分析,显示了器件优异的暗电流特性.在室温下,-10 mV偏压时器件的暗电流和优质因子R0A分别为0. 45 nA和14. 7Ω·cm^2,量子效率可达到63%.为了证实像元中心距减小并未影响器件性能,与同种材料中心距30μm的InGaAs焦平面阵列进行了对比分析.相似的实验结果进一步证明了工艺的可行性,对今后实现高密度、大面阵延伸波长InGaAs探测器具有重要的指导意义.A sub-10μm InGaAs(IGA)focal plane array(FPA),with cut-off wavelength of 2.6μm has been developed.The pixel pitch is reduced significantly comparing with that of reported extended wavelength IGA FPAs.To verify the feasibility of technology,the performance of sub-10μm IGA FPA was tested and compared with 30μm pixel pitch IGA FPA,which was fabricated from the same epitaxial material.The sub-10μm IGA FPA exhibits high performances in terms of dark current(0.45 nA@V R=10 mV)and R 0 A(14.7Ω·cm^2)at room temperature.Its quantum efficiency can reach 63%.The comparable performances to 30μm pixel pitch IGA FPA illustrate that the sub-10μm IGA FPA fulfils the needs of large formats(>1 K×1 K)and high densities in extended wavelength IGA detectors.

关 键 词:延伸波长 INGAAS探测器 小像元 暗电流密度 量子效率 

分 类 号:TN215[电子电信—物理电子学]

 

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