高k介质栅材料电子辐照下的红外研究  

The Study of FTIR in High k Gate Materials under Electron Irradiation

作　　者：林巍[1] 马瑶[1] 石瑞英[1] 傅廷 龚敏[1] LIN Wei;MA Yao;SHI Ruiying;FU Ting;GONG Min(School of Physical Science and Technology,Sichuan Province Key Laboratory ofMicroelectronics,Sichuan University,Chengdu 610064,China)

机构地区：[1]四川大学物理科学与技术学院微电子技术四川省重点实验室,成都610064

出　　处：《光散射学报》2018年第4期379-383,共5页The Journal of Light Scattering

基　　金：国家自然科学基金项目(2017YFB0405700)

摘　　要：本文研究了SiO_2/Si、SiNX/Si、Al_2O_3/Si这三种具有不同介电常数(k)栅介质材料结构在1.7 MeV电子辐照前后的傅里叶红外光谱。随着辐照剂量的增大,三种结构的吸收峰强度均随之减小,其振动模式受到影响。电子辐照SiO_2/Si结构后,振动吸收峰随着辐照剂量的增大,由Si-O-Si、Si-O键引起的伸缩振动吸收峰的位置向低波数移动。电子辐照SiNX/Si结构后,由Si-N键、Si-O键引起的伸缩振动吸收峰的位置向高波数移动。电子辐照Al_2O_3/Si结构后,由Al_2O_3的晶格振动,Al-O-Al键引起的伸缩振动吸收峰的位置向高波数移动。吸收峰的变化为电子辐照不同介质材料引入的缺陷提供了新的信息。We reported an experimental study by the fourier transform infrared spectroscopy(FTIR)measurements focused on the effect of1.7MeV electron irradiation in three different high k gate structure(SiO2/Si structure,SiN x/Si structure and Al2O3/Si structure).This FTIR spectrum is found that the absorption peak intensities of all three materials decrease with the increase of irradiation dose.After the electron irradiation of SiO2/Si structure,the vibrational absorption peak shifts to the low wave number with the increase of irradiation dose and the stretching vibration absorption peak was caused by Si-O-Si and Si-O bonds.To the SiN x/Si structure,the position of the stretching vibration absorption peak caused by Si-N bond and Si-O bond shifted to high wave number.To the Al2O3/Si structure samples,the position of the stretching vibration absorption peak caused by Al-O-Al crystal lattice vibration and Al-O-Al bond shifts to a high wave number.The change of the absorption peak provides new information for the defects introduced by electronically irradiated different dielectric materials.

关 键 词：电子辐照 高k介质 FTIR 

分 类 号：O433[机械工程—光学工程]