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作 者:陈雪辉 吴超 李翔 徐欣 王可朝 张遥 CHEN Xuehui;WU Chao;LI Xiang;XU Xin;WANG Kechao;ZHANG Yao(School of Mechanical and Electrical Engineering,Anhui Jianzhu University,Hefei 230601,China)
机构地区:[1]安徽建筑大学机械与电气工程学院,安徽合肥230601
出 处:《电加工与模具》2018年第6期40-43,共4页Electromachining & Mould
基 金:安徽省高校自然科学重点项目(KJ2015A013);安徽省高校优秀青年人才支持计划重点项目(gxyqZD2016153)
摘 要:激光刻蚀碳化硅的影响因子较多,仅依靠试验方法研究激光刻蚀过程难以充分和有效了解其过程,数值仿真模拟己成为研究激光刻蚀的一种有力手段。基于ABAQUS有限元软件的数学模型和数值方法,利用FORTRAN编写的用户子程序,模拟了不同激光热源下碳化硅激光刻蚀过程中温度场和刻蚀深度的变化。结果表明:不同的热源模型对刻蚀区域的最高温度及热影响区的温度分布有一定影响,综合比较发现选择双椭球热源模型优于高斯面热源模型。Many influence factors play roles in laser etching silicon carbide and only depending on the experimental method to study the laser etching process cannot gain a fully understanding of it,so the numerical simulation has become a powerful means to study the laser etching.Based on the mathematical model and numerical method of ABAQUS finite element software,the user subroutine written by FORTRAN is used to simulate the variation of temperature field and etching depth in the process of silicon carbide laser etching under different laser heat sources.The results show that different heat source models get a certain influence on the maximum temperature of the etched area and the temperature distribution of the heat affected zone.Through comprehensive comparative analysis,it is found that the choice of double ellipsoid heat source model is better than Gaussian heat source model.
分 类 号:TG665[金属学及工艺—金属切削加工及机床]
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