缓冲层材料对纤锌矿结构GaN(0001)光电发射性能的影响  

Influence of Buffer Layer Material on Photoemission for Wurtzite GaN(0001)

作　　者：李飙 任艺[2] 常本康[3] LI Biao;REN Yi;CHANG Benkang(School of Electronic and Electrical Engineering,Shangqiu Normal University,Shangqiu He’nan 476000,China;Department of Electrical and Mechanical Engineering,Shangqiu Polytechnic,Shangqiu He’nan 476000,China;Institute of Electronic Engineering and Optoelectronic Technology,Nanjing University of Science and Technology,Nanjing 210094,China)

机构地区：[1]商丘师范学院电子电气工程学院,河南商丘476000 [2]商丘职业技术学院机电系,河南商丘476000 [3]南京理工大学电子工程与光电技术学院,南京210094

出　　处：《电子器件》2018年第6期1376-1379,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金项目(91433108)

摘　　要：利用异质外延技术在蓝宝石衬底上生长了Ga N光电发射层,为降低发射层和衬底间的失配,在衬底和发射层间分别采用了Al N和Al1-xGaxN两种不同的缓冲层材料。对具有不同缓冲层材料的样品进行了表面清洗与激活,在激活结束后分别测试了两种样品的光谱响应,其最大量子效率分别为13%和20%,依据激活后光电阴极的光谱响应作为评估标准,可以得出,采用组份渐变Al1-xGaxN作为缓冲层激活出的阴极具有更高的光电发射性能,从而实现了Ga N光电阴极结构的优化设计。The two transmission-mode GaN photocathode samples both were grown by metal organic chemical vapor deposition,wherein one is a sapphire/AlN/GaN structure and the them is a sapphire/Al1-x GaxN/GaN structure,and the active layer in both structures was doped with p-type magnesium.The highest quantum efficiency 20%is achieved for Al1-x GaxN buffer layer GaN photocathode,which is much higher than that of an AlN buffer layer GaN photocathode under identical cleaning and activation condition.The inherent mechanism responsible for the fact that an Al1-x GaxN buffer layer GaN photocathode can obtain higher quantum efficiency is also discussed.

关 键 词：光电子学 光电子器件 光谱响应 光电阴极 氮化镓 缓冲层 铝镓氮 

分 类 号：O433[机械工程—光学工程] TN203[理学—光学]