用于InSb探测器芯片的激光划片工艺方案简析  

Brief Analysis of Laser Scratching Technology for InSb Detector Chip

作　　者：李家发 曹立雅 张紫辰[2] 侯煜 LI Jia-fa;CAO Li-ya;ZHANG Zi-chen;HOU Yu(North China Research Institute of Klectron-Optics,Beijing 100015,China;Institute o f Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]华北光电技术研究所,北京100015 [2]中国科学院微电子研究所,北京100029

出　　处：《红外》2018年第12期16-19,共4页Infrared

摘　　要：针对InSb探测器芯片,基于紫外皮秒激光器搭建了定制化的光学平台和振镜系统。通过固定激光脉冲的重复频率,探讨了低能量多刀数以及高能量少刀数等工艺条件,获得了适合InSb探测器芯片激光划片的工艺条件。结果表明,热影响与崩边情况均可满足项目要求。A system containing an optical platform and a galvanometer is set up for InSb detector chips on the basis of an ultraviolet picosecond laser.By fixing the laser pulse repetition frequency,different technological conditions such as low-energy muli-knife-number and high-energy less-knife-number are discussed and the technological conditions suitable for laser scribing of InSb detector chips are obtained.The results show that by using these technological conditions,both heat effect and edge breakage meet the requirements of the pro-ject.

关 键 词：InSb材料 激光划片 热影响 崩边 

分 类 号：TN21[电子电信—物理电子学]