InSb红外探测器芯片粘接工艺研究  

Research on die bonding of InSb IR detector

作　　者：沈祥伟[1] 朱旭波[1] 张小雷[1] 张力学 李春强 高创特 SHEN Xiang-wei;ZHU Xu-bo;ZHANG Xiao-lei;ZHANG Li-xue;LI Chun-qiang;GAO Chuang-te(China Airborne Missile Academy,Luoyang 471000,China)

机构地区：[1]中国空空导弹研究院,河南洛阳471009

出　　处：《激光与红外》2019年第1期77-81,共5页Laser & Infrared

摘　　要：基于InSb红外探测器的封装特点,采用正交试验法研究了芯片粘接过程中基板平整度、粘接剂抽真空时间、配胶时间、固化条件等工艺参数对芯片性能及可靠性的影响。通过计算极差和方差分析了各因素对芯片可靠性的影响大小。结果表明,固化条件对粘接后芯片的性能影响最大,其次是配胶时间,而抽真空时间和基板平整度影响相对较小。针对极差分析得出的较优参数组合和较差参数组合,利用X射线衍射(XRD)研究了不同参数组合对晶片粘接的应力大小,所得结果与正交试验一致。Based on the packaging features of InSb IR detector,orthogonal experiment is designed for studying the parameters such as substrate bending,vacuuming time of adhesive,preparing time of adhesive and solidify condition,which can influence the elctrical properties and reliability of InSb chip during die bonding processing.Range and va riance is calculated to evaluate the infuence level of the parameters on InSb chip.The results show that the solidify condition has the greatest influence on the electrical performance of the InSb chip after bonding,followed by the preparing time of adhesive,while the vacuuming time of adhesive and the fatness of the substrate have relatively little in-fuence.According to the optimal combination and poor combination of parameters,the stress in InSb chip caused by diferent combination is investigated with XRD,and the results were consistent with the orthogonal experiment.

关 键 词：芯片粘接 正交试验 XRD 应力 

分 类 号：TN214[电子电信—物理电子学]